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A scanning electron microscope technique is used, in combination with an optical imaging system, to measure minority carrier diffusion length in a heavily doped GaAs double heterostructure. Diffusion and drift of charge are imaged. A diffusion length of 3.6 μm is measured, corresponding to a minority carrier mobility of 1150 cm2/Vs in p-type material doped ∼5×1018 cm-3. Measurements are made as a function of local electric field and sample temperature. The technique offers a flexible approach to direct measurement of transport properties and is applicable to a range of luminescent materials and multilayer devices. [ABSTRACT FROM AUTHOR]