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A DC∼10.5 GHz complimentary metal oxide semiconductor (CMOS) distributed amplifier (DA) with flat and low noise figure (NF), flat and high power gain (S21) and small group delay (GD) variation for ultra-wideband (UWB) pulse radio systems using standard 0.18 µm CMOS technology is demonstrated. Flat and low NF was achieved by adopting the proposed resistor capacitor (RC) terminal network with 140 Ω terminal resistance over the frequency band of interest (instead of the traditional 50 Ω terminal resistance or the recently proposed resistor inductor (RL) terminal network) for the gate transmission line. Besides, flat and high S21 was achieved by using cascoded transistors as the gain cell. Over the DC∼10.5 GHz band, the DA consumed 29.16 mW and achieved flat and high |S21| of 10.5±1.4 dB, flat and low NF of 3.2±0.3 dB and excellent phase linearity (the GD variation was only ±13.8 ps), one of the best NF and phase linearity results ever reported for a CMOS DA or wideband low-noise amplifier (LNA) with bandwidth greater than 7.5 GHz. [ABSTRACT FROM AUTHOR]

A low-power 3.2-9.7 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent stop-band rejection by 0.18 µm CMOS technology is demonstrated. High stop-band rejection is achieved by using a passive bandpass filter (BP-filter) with three finite transmission zeros (in the input terminal), one of which (ωz1=0.9 GHz) is in the low-frequency stop-band and the other two (ωz3 and ωz5) are in the high-frequency stop-band. In addition, an active notch filter is used in the output terminal to introduce another low-frequency stop-band transmission zero (ωz2) at 2.4 GHz. The LNA consumes 4.68 mW and achieves S11 of -10 to -39.5 dB, S21 of 9.3±1.5 dB, and an average NF of 6 dB over the 3.2-9.7 GHz band. The measured stop-band rejection is better than 21.6 dB for frequencies DC-2.5 and 11.2-20 GHz. [ABSTRACT FROM AUTHOR]

A low-power 3-10 GHz common-gate CMOS ultra-wideband (UWB) low-noise amplifier (LNA) using a T-match input network and the self-body-bias technique is demonstrated. Wideband input impedance matching was achieved by using the proposed T-match input network to improve the input matching at low frequencies. A low supply voltage of 1.1 V (for two VDS drops) was achieved by using the self-body-bias technique to reduce the threshold voltage (Vth) of the transistors, which leads to a low power consumption (PD). At VG=0.77 V, the LNA consumed 2.15 mW and achieved S11 of -10.4 to -35.5 dB, S21 of 10.4 dB, and an average NF of 4.9 dB over the 3-10 GHz band of interest. At VG=0.63 V, the LNA consumed 0.99 mW and achieved S11 of -10.7 to -35.8 dB, S21 of 7.9 dB and an average NF of 6 dB. Both are the lowest PD ever reported for an UWB CMOS LNA with bandwidth greater than 6 GHz. [ABSTRACT FROM AUTHOR]