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We investigate the charge relaxation resistances in a typical graphene nanoribbon FET (GNRFET). We show that the behavior of the charge relaxation resistances heavily depends on the exerted gate voltage and the structural details of the GNRFET. When there is 0 channel (blocked), 1 channel, and $N$ channels in the GNR as tuned by the gate voltage, the equilibrium charge relaxation resistance is roughly 1, 1/2$ , and 1/2N$ of Sharvin–Imry contact resistance ( ), respectively, whereas the nonequilibrium charge relaxation resistance is much smaller. Our results indicate that the charge relaxation resistances characterizing the information of dissipation, $RC$ time and noise can be controlled by the gate voltage. [ABSTRACT FROM AUTHOR]

From the spin–spin interaction, spin-capacitive term is defined in a similar way to the usual charge capacitive term that is due to the charge–charge interaction. The charge and spin capacitive effects between the gate and central channel region are found to play an important role in gate-controlled spin-dependent transport systems. Both the capacitive terms affect system’s charge and spin ac transport properties. The behaviors of conductance, density of states, and internal potentials demonstrate the strong involvement of charge and spin in electrons in spin-dependent transport. The purpose of this paper is to draw attention to the Coulomb and exchange interactions in spintronics devices. [ABSTRACT FROM AUTHOR]