1. Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies.
- Author
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Privat, A., Barnaby, H. J., Spear, M., Esposito, M., Manuel, J. E., Clark, L., Brunhaver, J., Duvnjak, A., Jokai, R., Holbert, K. E., McLain, M. L., Marinella, M. J., and King, M. P.
- Subjects
STRAY currents ,EVIDENCE ,LOGIC circuits ,RADIATION - Abstract
Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in the isolation layer give rise to a new radiation-induced leakage path which might lead to a reliability issue in CMOS technologies at or below the 14-nm node. TCAD simulations are performed and an analytical model for TID-induced leakage current is presented to support analysis of the identified TID mechanism. TCAD simulation and analytical model results are consistent with the experimental data. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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