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We demonstrate self-aligned fully-depleted 20-nm-thick In0.53Ga0.47As-channel MOSFETs using CMOS-compatible device structures and manufacturable process flows. These devices consist of self-aligned source/drain extensions and self-aligned raised source/drain with low sheet resistance of 360 and \(115~\Omega \) /sq, respectively. We demonstrate short-channel MOSFETs with gate lengths \(L_{G}\) down to 30 nm, low series resistance \(R_{\mathrm {EXT}}=375~\Omega \cdot \mu \) m, and high peak saturation transconductance \(G_{\mathrm {MSAT}}=1275~\mu \) S/ \(\mu \) m at \(L_{G} =50\) nm and drain bias \(V_{\mathrm {DS}} =0.5\) V. We obtain long-channel capacitive inversion thickness \(T_{\mathrm {INV}}= 2.3\) nm and effective mobility \(\mu _{\mathrm {EFF}} =650\) cm \(^{2}\vphantom {\Big (}\) /Vs at sheet carrier density \(N_{\mathit {S}} = 5 \times 10^{12}\) cm \(^{\mathrm {-2}}\) . Finally, using a calibrated quasi-ballistic FET model, we argue that for \(L_{G} \le 20\) nm, \(\mu _{\mathrm {EFF}}\approx 1000\) cm \(^{2}\) /Vs will lead to short-channel MOSFETs operating within 10% of the ballistic limit. Thus, our III–V processes and device structures are well-suited for future generations of high-performance CMOS applications at short gate lengths and tight gate pitches. [ABSTRACT FROM AUTHOR]

In this brief, threshold voltage mismatch of fully integrated n-type FinFETs based on a gate-first process was studied experimentally. Significantly improved threshold voltage mismatch due to undoped FIN body was confirmed with the experimental data. By comparing mismatch values of thin- and thick-oxide nMOS, we found that factors, which do not scale with gate oxide thickness, including line edge roughness and metal-gate granularity (MGG), can explain \sim60\% of total mismatch of thin-oxide devices. Moreover, we report a convex shape of threshold voltage mismatch following the increase of the number of FINs and propose a possible explanation of the abnormal behavior. Due to channel width quantization, two competing contributors impact mismatch: as FIN number becomes smaller mismatch due to MGG likely play an important role which increases threshold voltage mismatch, whereas FIN number becomes larger, systematic variation becomes the main factor, which also increases threshold voltage mismatch. [ABSTRACT FROM PUBLISHER]