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A high-power phosphor-converted white wafer-level LED with 92,000 lm was demonstrated. The high-power white LED was manufactured by utilising a blue single wafer-level LED chip coated with a 60-µm-thick thin film phosphor layer. The electrical and optical characteristics of the LED were measured. Results show that the luminous flux and luminous efficacy reach to 92,000 lm and ∼89 lm/W at an input electrical power of 1035 W, respectively. The view angle is about 133°. [ABSTRACT FROM AUTHOR]

A simplified packaging process was successfully developed for a wafer-level light emitting diode (WL-LED) chip aiming at very-high power solid-state lighting (SSL) applications. Compared with the traditional chip-on-board (COB) technology, WL-LED chip not only greatly simplifies the packaging process but also enables the lighting source more compact. The fabricated blue WL-LED SSL source with a record-high light output power of 305 W exhibits $\sim 30$ % wall plug efficiency at an input electrical power of 1026 W. [ABSTRACT FROM PUBLISHER]

In this Letter, a GaN-based high-power (HP) single-chip (SC) large-area LED with parallel and series network structure is fabricated. The optical characteristics of the HP-SC LED is investigated. Driven at 600 mA, the optical output power of the HP-SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light-extraction efficiency degradation and the self-heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP-SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large-area LEDs. [ABSTRACT FROM AUTHOR]

Based on the optimised high‐voltage network design and the resistance matching technique, a wafer‐level light emitting diode (WL‐LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL‐LED was measured to be 24% at a driving current of 4 A. [ABSTRACT FROM AUTHOR]

A high‐power phosphor‐converted white LED with 3058 lm is reported. The high‐power white LED was manufactured by utilising a single‐blue LED chip with a cerium‐doped yttrium aluminium garnet phosphor crystal film, and the LED chip consists of 16 LED cells that are connected in series, the chip dimensions are of 4.5 × 4.5 mm2. The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Results show that the luminous flux and luminous efficacy at 500 mA reach to 3058 lm and 128 lm/W, respectively. [ABSTRACT FROM AUTHOR]