1. Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers.
- Author
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Sheu, J. K., Tu, S. J., Lee, M. L., Yeh, Y. H., Yang, C. C., Huang, F. W., Lai, W. C., Chen, C. W., and Chi, G. C.
- Subjects
GALLIUM nitride ,LIGHT emitting diodes ,SILICON ,EPITAXY ,PHOTONICS ,PROBABILITY theory ,AIR - Abstract
GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance light-extraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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