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Abstract: In this study, 980nm high-power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) with large emission aperture are described. The devices have been fabricated by using oxidation confinement technology. Al2O3 film, instead of SiN x film, is used as the passivation layer to enhance heat dissipation. A distinguished device performance is achieved. The maximum continuous-wave (CW) output power of the large emission aperture devices with active diameters up to 500μm is as high as 1.95W at room temperature. [Copyright &y& Elsevier]

Abstract: Single devices and 2-D arrays of bottom-emitting vertical-cavity surface-emitting lasers operating in the 980nm wavelength regime, have been fabricated for high continuous-wave optical output power. Single devices with active diameters of 500μm show high output powers of 1.95 W at room temperature. Its threshold current is 510mA, and the maximum spatially averaged optical power density is 0.93kW/cm2. Arrays consisting of 16 elements of 200μm active diameters arranged in a square structure achieve output powers of 1.21 W corresponding to a power density of 1kW/cm2 spatially averaged over the effective array chip size. The device threshold current is 1.1A. [Copyright &y& Elsevier]