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Chiral perovskites possess a huge applicative potential in several areas of optoelectronics and spintronics. The development of novel lead‐free perovskites with tunable properties is a key topic of current research. Herein, we report a novel lead‐free chiral perovskite, namely (R/S−)ClMBA2SnI4 (ClMBA=1‐(4‐chlorophenyl)ethanamine) and the corresponding racemic system. ClMBA2SnI4 samples exhibit a low band gap (2.12 eV) together with broad emission extending in the red region of the spectrum (∼1.7 eV). Chirality transfer from the organic ligand induces chiroptical activity in the 465–530 nm range. Density functional theory calculations show a Rashba type band splitting for the chiral samples and no band splitting for the racemic isomer. Self‐trapped exciton formation is at the origin of the large Stokes shift in the emission. Careful correlation with analogous lead and lead‐free 2D chiral perovskites confirms the role of the symmetry‐breaking distortions in the inorganic layers associated with the ligands as the source of the observed chiroptical properties providing also preliminary structure‐property correlation in 2D chiral perovskites. [ABSTRACT FROM AUTHOR]

Perovskites are attracting an increasing interest in the wide community of photovoltaics, optoelectronic, and detection, traditionally relying on lead-based systems. This Minireview provides an overview of the current status of experimental and computational results available on Ge-containing 3D and lowdimensional halide perovskites. While stability issues analogous to those of tin-based materials are present, some strategies to afford this problem in Ge metal halide perovskites (MHPs) for photovoltaics have already been identified and successfully employed, reaching efficiencies of solar devices greater than 7% at up to 500 h of illumination. Interestingly, some Gecontaining MHPs showed promising nonlinear optical responses as well as quite broad emissions, which are worthy of further investigation starting from the basic materials chemistry perspective, where a large space for properties modulation through compositions/alloying/fnanostructuring is present. [ABSTRACT FROM AUTHOR]