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The authors have proposed an image-memory LCD using ferroelectric thin film for memory elements to achieve ultralow power consumption. Memory operation with gray-scale levels was confirmed by using an equivalent circuit model of the LCD consisting of a discrete ferroelectric device. The reduction in power consumption is related to hold time and the ferroelectric characteristics.

A novel formation process for TFT using our proposed novel selective transfer technique, which enables low cost TFT fabrication on a large and flexible substrate, is proposed. This technique is used to fabricate a 3.2-inch LCD Panel using amorphous silicon TFT transferred on glass substrate for the first time.

A 2.8″-diagonal reflective image-memory LCD using ferroelectric film for memory elements, which enables ultra-low-power consumption, is fabricated on a glass substrate for the first time. The asymmetrical feature of the hysteresis loop is improved by symmetrical ferroelectric capacitor configuration, and achieved an image-memory color LCD with good quality.

A novel image-memory LCD using ferroelectric film for memory elements with gray-scale capability and ultra-low-power consumption has been proposed. We have demonstrated the operation of image-memory function by using an LC cell with discrete ferroelectric devices. A gray-scale image without any power consumption for more than several seconds has been obtained.