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Large-area-based field-effect transistor (FET) gas sensor has the potential to provide a larger sensing area for a chemical analyte. So far, graphene FETs (GFETs) are mostly fabricated by expensive lithographic techniques with a minimum channel length. We have demonstrated a simple way to fabricate a very large channel length of 0.45 mm GFET using ion-conducting dielectric with thermally evaporate source/drain electrodes and has been demonstrated for an application of ambient atmosphere ammonia gas sensing. Ion-conducting Li5AlO4 gate dielectric has reduced operating voltage up to 2.0 V with good current saturation. The chemical vapor deposition (CVD) grown uniform monolayer of graphene has been used as an active channel layer of FET. The fabricated device has been tested for different concentrations of ammonia in ambient environment conditions at 25 °C temperature, which indicates that the Dirac point voltage of the device varies up to 0.8 V when the concentration of ammonia has been changed from 0 to 3 ppm. Moreover, this study also reveals that this GFET is capable of detecting ammonia up to the concentration level of 0.1 ppm.

This work reports the green to red color tunable upconversion emission in a newly synthesized Ho3+/Yb3+ codoped YV0.75Ta0.25O4 phosphor, prepared by solid-state reaction (SSR) method. The crystal phase formation has been confirmed by X-Ray diffraction analysis. The Fourier transform infrared (FTIR) spectrum show bands at different frequencies due to V-O and Ta-O, and found to play a vital role in relaxation (radiative and non-radiative) processes. The synthesized phosphor sample show intense upconversion (UC) emission in green (∼539 nm), red (∼659 nm) and in near infrared (NIR∼ 754 nm) regions on 980 nm laser excitation. These bands appear as a result of (5F4+5S2→5I8), (5F5→5I8) and (5F4+5S2→5I7) transitions of Ho3+ ion, respectively. The tunability in color from green to orange-red is observed on varying the pump power of NIR laser (980 nm excitation). The intrinsic optical bistability is observed in both, green & red upconversion bands with the increase and decrease in power of NIR source. The Ln I-Ln P plots suggest that green & red UC emissions are due to two photon absorption at low laser power. A decrease in the slope values at higher pump powers confirms the laser induced optical heating (LIOH) in the material. The pump power based color tunable emission and optical bistability can be utilized in security detection, optical memory, optical color coding, color switching and in various advanced applications.

In recent years, two-dimensional (2D) atomically thin crystals ranging from insulator to superconductor such as graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenides (TMDs), etc. have attracted extensive attention due to their exceptional properties and many potential applications in various areas. In this chapter we focus on the experimental characterization of 2D materials and their heterostructures andcover brief introduction and detailed structural, optical, and chemical characterizations of some important 2D materials.