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It is well‐known that the alkali doping of polycrystalline Cu2ZnSn(S,Se)4 (CZTSSe) and Cu(In,Ga)(Se,S)2 has a beneficial influence on the device performance and there are various hypotheses about the principles of performance improvement. This work clearly explains the effect of Na doping on the fill factor (FF) rather than on all of the solar cell parameters (open‐circuit voltage, FF, and sometimes short circuit current) for overall performance improvement. When doping is optimized, the fabricated device shows sufficient built‐in potential and selects a better carrier transport path by the high potential difference between the intragrains and the grain boundaries. On the other hand, when doping is excessive, the device shows low contact potential difference and FF and selects a worse carrier transport path even though the built‐in potential becomes stronger. The fabricated CZTSSe solar cell on a flexible metal foil optimized with a 25 nm thick NaF doping layer achieves an FF of 62.63%, thereby clearly showing the enhancing effect of Na doping.

In recent years, research into implementing microdisplays for use in virtual reality and augmented reality has been actively conducted worldwide. Specifically, inorganic light-emitting diodes (LED)...

Hybrid concentrator photovoltaic (CPV) architectures that combine CPV modules with low-cost solar cells have the advantage of functioning well in modest direct normal irradiance (DNI) regions as well as high-DNI regions, where these architectures allow for higher performance in a limited space. For higher performance of a hybrid CPV module, we optimized the secondary optical element (SOE) using raytracing software and conducted experimental measurements that consider the effective wavelength range. Our experiments with the optimized SOE (&theta, = 30&deg, h = 15 mm) demonstrated a maximum output power on the triple-junction cell and polycrystalline silicon cell of 212.8 W/m2 and 5.14 W/m2, respectively.

In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530–630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.