1. Experimental study of LiNbO3 memristors for use in neuromorphic computing
- Author
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Tarek M. Taha, Chris Yakopcic, Guru Subramanyam, Weisong Wang, Eunsung Shin, and Shu Wang
- Subjects
010302 applied physics ,Materials science ,Fabrication ,Lithium niobate ,02 engineering and technology ,Memristor ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Resistive random-access memory ,law.invention ,chemistry.chemical_compound ,Neuromorphic engineering ,Memistor ,chemistry ,law ,0103 physical sciences ,Electronic engineering ,State (computer science) ,Electrical and Electronic Engineering ,Data retention ,0210 nano-technology - Abstract
This paper describes the fabrication and characterization of Lithium Niobate (LiNbO3) memristor devices that have the ability to be tuned to a specific resistance state within a continuous resistance range. This is essential for programming neuromorphic systems based on memristor crossbars in order to achieve best deep learning capability. The memristor devices were formed using a 42 nm layer of LiNbO3 sandwiched between two metal electrodes. I-V curves demonstrate a typical and repeatable memristor characteristic from − 3 V to 3 V. Such devices have a continuous resistance range that has a maximum to minimum resistance ratio of about 100, and the ability to program intermediate resistance states. The results also show the ability to read the device symmetrically with a positive or negative voltage, and strong data retention after the programming phase.
- Published
- 2017