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2. Measurements of near-infrared frequency mixing by metal-semiconductor point-contact diodes

Author

Bava, E, Beverini, N, Carelli, G, De Michele, A, Galzerano, Maccioni, Moretti, Prevedelli, M, Sorrentino, F, Svelto, C, E. Bava, N. Beverini, G. Carelli, A. De Michele, G. Galzerano, E. Maccioni, A. Moretti, M. Prevedelli, F. Sorrentino, and C. Svelto

Subjects
Materials science, business.industry, optical mixer, Near-infrared spectroscopy, phase-lock, VISIBLE LASER-LIGHT, Laser, near-infrared, Metal semiconductor, Semiconductor laser theory, law.invention, Phase-locked loop, diode laser, Semiconductor, law, Optoelectronics, frequency measurement, Electrical and Electronic Engineering, business, Instrumentation, Gunn diode, Diode
Abstract

The performances of metal-semiconductor point-contact diodes as mixers in the near-infrared region were tested. Preliminary experiments were performed in order to phase-lock two diode lasers at 850 nm a few hundred gigahertz apart. GaSb, InAs, and InSb as semiconductor layers were used. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1-GHz oscillator. A novel phase-lock circuit was tested on two diode lasers 72 GHz apart.

Published
2005
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