1. Light-Field-Driven Current Control in Dielectrics with pJ-Level Laser Pulses at 80 MHz Repetition Rate
- Author
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Judit Budai, Péter Sándor, Zilong Wang, Zsuzsanna Marton, Pallabi Paul, János Volk, Péter Dombi, Boris Bergues, Matthias F. Kling, Gellért Zsolt Kiss, Viktória Csajbók, Adriana Szeghalmi, Václav Hanus, György Molnár, and Zsuzsanna Pápa
- Subjects
Materials science ,business.industry ,Gallium nitride ,Dielectric ,Laser ,Semiconductor laser theory ,law.invention ,chemistry.chemical_compound ,Semiconductor ,chemistry ,law ,Miniaturization ,Optoelectronics ,Electronics ,Transient (oscillation) ,business - Abstract
Solid-state devices capable to react on the sub-cycle evolution of optical fields can pave the way towards petahertz electronics or provide new diagnostic devices for few-cycle lasers [1] . Such devices might rely on an effect of a transient metallization of wide-bandgap materials demonstrated in dielectrics [2] and semiconductors [3] . The observation of optical current control so far has been limited to millijoule-class laser systems which hinders the development towards the miniaturization and mass availability of the potential devices as these high-pulse-energy systems are bulky and have low repetition rate. Here, we report on the transient metallization and CEP-driven current control induced in a compact setup at 80 MHz repetition rate in dielectric SiO 2 , HfO 2 and semiconducting GaN with pJ-class pulses for the first time to our knowledge.
- Published
- 2021
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