1. Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm
- Author
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Jiang Jiang, Gregory Belenky, Leon Shterengas, Gela Kipshidze, Alexey Belyanin, and Aaron Stein
- Subjects
Materials science ,business.industry ,Terahertz radiation ,Physics::Optics ,02 engineering and technology ,Electron ,Laser ,Distributed Bragg reflector ,Atomic and Molecular Physics, and Optics ,Computer Science::Other ,Electronic, Optical and Magnetic Materials ,law.invention ,020210 optoelectronics & photonics ,Etching (microfabrication) ,law ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,Continuous wave ,Emission spectrum ,Electrical and Electronic Engineering ,business ,Diode - Abstract
The interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to $20~\mu \text{m}$ improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C.
- Published
- 2020
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