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A unique feature of two-dimensional (2D) materials is the ultralow friction at their van der Waals interfaces. A key question in a new generation of 2D heterostructure-based nanoelectromechanical systems (NEMS) is how the low friction interfaces will affect the dynamic performance. Here, we apply the exquisite sensitivity of graphene nanoelectromechanical drumhead resonators to compare the dissipation from monolayer, Bernal-stacked bilayer, and twisted bilayer graphene membranes. We find a significant difference in the average quality factors of three resonator types: 53 for monolayer, 40 for twisted and 31 for Bernal-stacked membranes. We model this difference as a combination of change in stiffness and additional dissipation from interlayer friction during motion. We find even the lowest frictions measured on sliding 2D interfaces are sufficient to alter dissipation in 2D NEMS. This model provides a generalized approach to quantify dissipation in NEMS based on 2D heterostructures which incorporate interlayer slip and friction.

Waveguides for mechanical signal transmission in the megahertz to gigahertz regimes enable on-chip phononic circuitry, which brings new capabilities complementing photonics and electronics. Lattices of coupled nano-electromechanical drumhead resonators are suitable for these waveguides due to their high Q-factor and precisely engineered band structure. Here, we show that thermally induced elastic buckling of such resonators causes a phase transition in the waveguide leading to reversible control of signal transmission. Specifically, when cooled, the lowest-frequency transmission band associated with the primary acoustic mode vanishes. Experiments show the merging of the lower and upper band gaps, such that signals remain localized at the excitation boundary. Numerical simulations show that the temperature-induced destruction of the pass band is a result of inhomogeneous elastic buckling, which disturbs the waveguide's periodicity and suppresses the wave propagation. Mechanical phase transitions in waveguides open opportunities for drastic phononic band reconfiguration in on-chip circuitry and computing.

Two-dimensional (2D) materials and heterostructures are promising candidates for nanoelectronics. However, the quality of material interfaces often limits the performance of electronic devices made from atomically thick 2D materials and heterostructures. Atomic force microscopy (AFM) tip-based cleaning is a reliable technique to remove interface contaminants and flatten heterostructures. Here, we demonstrate AFM tip-based cleaning applied to hBN-encapsulated monolayer MoS2 transistors, which results in electrical performance improvements of the devices. To investigate the impact of cleaning on device performance, we compared the characteristics of as-transferred heterostructures and transistors before and after tip-based cleaning using photoluminescence (PL) and electronic measurements. The PL linewidth of monolayer MoS2 decreased from 84 meV before cleaning to 71 meV after cleaning. The extrinsic mobility of monolayer MoS2 field-effect transistors increased from 21 cm2/Vs before cleaning to 38 cm2/Vs after cleaning. Using the results from AFM topography, photoluminescence, and back-gated field-effect measurements, we infer that tip-based cleaning enhances the mobility of hBN-encapsulated monolayer MoS2 by reducing interface disorder. Finally, we fabricate a MoS2 field-effect transistor (FET) from a tip-cleaned heterostructure and achieved a device mobility of 73 cm2/Vs. The results of this work could be used to improve the electrical performance of heterostructure devices and other types of mechanically assembled van der Waals heterostructures.

Monolayer MoS2 is a promising material for nanoelectronics; however, the lack of nanofabrication tools and processes has made it very challenging to realize nanometer-scale electronic devices from monolayer MoS2. Here, we demonstrate the fabrication of monolayer MoS2 nanoribbon field-effect transistors as narrow as 30 nm using scanning probe lithography (SPL). The SPL process uses a heated nanometer-scale tip to deposit narrow nanoribbon polymer structures onto monolayer MoS2. The polymer serves as an etch mask during a XeF2 vapor etch, which defines the channel of a field-effect transistor (FET). We fabricated seven devices with a channel width ranging from 30 to 370 nm, and the fabrication process was carefully studied by electronic measurements made at each process step. The nanoribbon devices have a current on/off ratio > 104 and an extrinsic field-effect mobility up to 8.53 cm2/(V s). By comparing a 30 nm wide device with a 60 nm wide device that was fabricated on the same MoS2 flake, we found the na...

While many technologies rely on multilayer heterostructures, most of the studies on chemical functionalization have been limited to monolayer graphene. In order to use functionalization in multilayer systems, we must first understand the interlayer interactions between functionalized and nonfunctionalized (intact) layers and how to selectively functionalize one layer at a time. Here, we demonstrate a method to fabricate single- or double-sided fluorinated bilayer graphene (FBG) by tailoring substrate interactions. Both the top and bottom surfaces of bilayer graphene on the rough silicon dioxide (SiO2) are fluorinated; meanwhile, only the top surface of graphene on hexagonal boron nitride (hBN) is fluorinated. The functionalization type affects electronic properties; double-sided FBG on SiO2 is insulating, whereas single-sided FBG on hBN maintains conducting, showing that the intact bottom layer becomes electrically decoupled from the fluorinated top insulating layer. Our results define a straightforward method to selectively functionalize the top and bottom surfaces of bilayer graphene.

Due to their high in-plane stiffness and low flexural rigidity, two-dimensional (2D) materials are excellent candidates for engineering three-dimensional (3D) nanostructures using crumpling. An important new direction is to integrate 2D materials into crumpled heterostructures, which can have much more complex device geometries. Here, we demonstrate phototransistors from crumpled 2D heterostructures formed from graphene contacts to a monolayer transition-metal dichalcogenide (MoS2, WSe2) channel and quantify the membrane morphology and optoelectronic performance. First, we examined the morphology of folds in the heterostructure and constituent monolayers under uniaxial compression. The 2D membranes relieve the stress by delaminating from the substrate and creating nearly periodic folds whose spacing depends on the membrane type. The matched mechanical stiffness of the constituting layers allows the 2D heterostructure to maintain a conformal interface through large deformations. Next, we examined the optoelectronic performance of a biaxially crumpled graphene-WSe2 phototransistor. Photoluminescence (PL) spectroscopy shows that the optical band gap of WSe2 shifts by less than 2 meV between flat and 15% biaxial crumpling, corresponding to a change in strain of less than 0.05%. The photoresponsivity scaled as P-0.38 and reached 20 A/W under an illumination power density of 4 μW/cm2 at 20 V bias, a performance comparable to flat photosensors. Using photocurrent microscopy, we observe that the photoresponsivity increases by only 20% after crumpling. Both the PL and photoresponse confirm that crumpling and delamination prevent the buildup of compressive strain leading to highly deformed materials and devices with similar performance to their flat analogs. These results set a foundation for crumpled all-2D heterostructure devices and circuitry for flexible and stretchable electronic applications.

Inducing and controlling three-dimensional deformations in monolayer two-dimensional materials is important for applications from stretchable electronics to origami nanoelectromechanical systems. For these applications, it is critical to understand how the properties of different materials influence the morphologies of two-dimensional atomic membranes under mechanical loading. Here, we systematically investigate the evolution of mechanical folding instabilities in uniaxially compressed monolayer graphene and MoS

We report efficient nonradiative energy transfer (NRET) from core-shell, semiconducting quantum dots to adjacent two-dimensional sheets of graphene and MoS2 of single- and few-layer thickness. We observe quenching of the photoluminescence (PL) from individual quantum dots and enhanced PL decay rates in time-resolved PL, corresponding to energy transfer rates of 1-10 ns(-1). Our measurements reveal contrasting trends in the NRET rate from the quantum dot to the van der Waals material as a function of thickness. The rate increases significantly with increasing layer thickness of graphene, but decreases with increasing thickness of MoS2 layers. A classical electromagnetic theory accounts for both the trends and absolute rates observed for the NRET. The countervailing trends arise from the competition between screening and absorption of the electric field of the quantum dot dipole inside the acceptor layers. We extend our analysis to predict the type of NRET behavior for the near-field coupling of a chromophore to a range of semiconducting and metallic thin film materials.

Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V−1 s−1 at carrier density of 4 × 1012 cm−2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art., Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm

We introduce graphene–silicon hybrid nonlinear devices operating at a few femtojoule cavity circulating energies, including: (1) dual- and single-cavity optical bistability; (2) detailed and broadband switching dynamics, and (3) free-carrier and thermal effects in regenerative oscillations. Sub-wavelength nanostructures confine light in a single mode silicon resonator with high Q/V ratio, enabling strong light interaction with the graphene cladding layer.

By placing monolayer graphene on silicon membrane, the effective Kerr coefficient of the hybrid media is enhanced 20 times compared to monolithic silicon. Optical four-wave mixing in graphene-silicon photonic crystal waveguide and a single mode cavity are observed at sub-milliwatt continuous wave input. This allows nonlinear functionalities including low power switching/gating, signal regeneration and parametric conversion, enhancing CMOS integrated photonic information processing on chips.

Graphene Staying Strong Although exfoliated graphene can be extremely strong, it is produced on too small a scale for materials application. Graphene can be produced on a more practical scale by chemical vapor deposition, but the presence of grain boundaries between crystallites apparently weakens the material. Lee et al. (p. 1073 ) show that postprocessing steps during the removal of the graphene sheets can oxidize the grain boundaries and weaken them. If these steps are avoided, the material is comparable in strength to exfoliated graphene.

We simulated the behavior of suspended carbon nanotube resonators over a broad range of temperatures to explore the physics of semiflexible polymers in underdamped environments. We find that thermal fluctuations induce strong coupling between resonance modes. This effect leads to spectral fluctuations that readily account for the experimentally observed quality factors Q ∼ 100 at 300 K . Using a mean-field approach to describe fluctuations, we analytically calculate Q and frequency shifts in tensioned and buckled carbon nanotubes and find excellent agreement with simulations.

We demonstrate terahertz (THz) imaging and spectroscopy of single-layer graphene deposited on an intrinsic Si substrate using THz time-domain spectroscopy. A single-cycle THz pulse undergoes multiple internal reflections within the Si substrate, and the THz absorption by the graphene layer accumulates through the multiple interactions with the graphene/Si interface. We exploit the large absorption of the multiply reflected THz pulses to acquire high-contrast THz images of graphene. We obtain local sheet conductivity of the graphene layer analyzing the transmission data with thin-film Fresnel formula based on the Drude model.

We use atomic force microscopy to image grain boundaries and ripples in graphene membranes obtained by chemical vapor deposition. Nanoindentation measurements reveal that out-of-plane ripples effectively soften graphene's in-plane stiffness. Furthermore, grain boundaries significantly decrease the breaking strength of these membranes. Molecular dynamics simulations reveal that grain boundaries are especially weakening when subnanometer voids are present in the lattice. Finally, we demonstrate that two graphene membranes brought together form membranes with higher resistance to breaking.

The original version of this Article contained an error in the second sentence of the second paragraph of the ‘Electrical properties of fluorinated graphene contacts’ section of the Results, which incorrectly read ‘The mobility was calculated by the Drude model, μ = ne/σ where μ, n, e, and σ are the carrier mobility, carrier density, electron charge, and sheet conductivity, respectively’. The correct version states ‘μ = σ/ne ’ in place of ‘μ = ne/σ ’. This has been corrected in both the PDF and HTML versions of the Article.

We demonstrate that a monolayer graphene membrane is impermeable to standard gases including helium. By applying a pressure difference across the membrane, we measure both the elastic constants and the mass of a single layer of graphene. This pressurized graphene membrane is the world's thinnest balloon and provides a unique separation barrier between 2 distinct regions that is only one atom thick.

Nanoelectromechanical systems were fabricated from single- and multilayer graphene sheets by mechanically exfoliating thin sheets from graphite over trenches in silicon oxide. Vibrations with fundamental resonant frequencies in the megahertz range are actuated either optically or electrically and detected optically by interferometry. We demonstrate room-temperature charge sensitivities down to 8 × 10 –4 electrons per root hertz. The thinnest resonator consists of a single suspended layer of atoms and represents the ultimate limit of two-dimensional nanoelectromechanical systems.

This work experimentally probes and demonstrates the piezoelectric properties of single-atomic-layer MoS2. MoS2 devices were fabricated on a thin amorphous fused silica substrate, which was bonded to the high-stress location of a tuning fork to maximize the strain and resulting piezoelectric output. The dynamic strain was simultaneously measured in-situ with a commercial semiconductor strain gauge. This strain characterization technique allows us to dynamically strain MoS2 at a set frequency with maximum peak-to-peak strain levels up to 500 µe (0.05%). We thus correlate piezoelectric output from the MoS2 sensor with the applied dynamic strain.

We demonstrate single atomic cladding layer of graphene enhance the photocurrent profile of the monolithic silicon p-i-n junction, by spatially- and spectrally- resolved photocurrent measurement.

A strategy is reported for the controlled assembly of organic-inorganic heterostructures consisting of individual single-walled carbon nanotubes (SWCNTs) selectively coupled to single semiconductor quantum dots (QDs). The assembly in aqueous solution was controlled towards the formation of monofunctionalized SWCNT-QD structures. Photoluminescence studies in solution, and on surfaces at the single nanohybrid level, showed evidence of electronic coupling between the two nanostructures. The ability to covalently couple heterostructures with single particle control is crucial for the design of novel QD-based optoelectronic and light-energy conversion devices.

Graphene/CdSe nanoparticle monolayer/graphene sandwich structures were fabricated to explore the interactions between these layered materials. Electrical transport across these heterostructures suggests that transport is limited by tunneling through the nanoparticle (NP) ligands but not the NP core itself. Photoconductivity suggests ligands may affect the exciton separation efficiency.

Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes defined by the spatial extent of this region. With the advent of atomically thin van der Waals (vdW) materials and their heterostructures, we are now able to realize a p-n junction at the ultimate quantum limit. In particular, vdW junctions composed of p- and n-type semiconductors each just one unit cell thick are predicted to exhibit completely different charge transport characteristics than bulk junctions. Here we report the electronic and optoelectronic characterization of atomically thin p-n heterojunctions fabricated using vdW assembly of transition metal dichalcogenides (TMDCs). Across the p-n interface, we observe gate-tuneable diode-like current rectification and photovoltaic response. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances collection of the photoexcited carriers. The atomically scaled vdW p-n heterostructures presented here constitute the ultimate quantum limit for functional electronic and optoelectronic components., Comment: 29 pages, 3 figures in main & 10 figures in supplementary information

We present a graphene pressure transducer consisting of an array of suspended circular graphene membranes over 3μm diameter holes in silicon dioxide on degenerately doped silicon. The transconductive nature of graphene allows the change in pressure to be translated into a change in resistance across the suspended graphene membranes. The pressure-induced deflections of the membrane vary the distance between the DC biased silicon back-gate and graphene membrane, changing the effective electric field which results in variations in the resistance of the suspended graphene. Our results demonstrate that pressure sensors constructed with graphene possess potential advantages over conventional pressure sensors such as higher sensitivity with diaphragm dimensions over 200X smaller than that of typical pressure transducers.

High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing and signal processing. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30 % on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electro-static tuning of the frequency by up to 1 % per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride., 8 pages, 5 figures, journal

While chemical vapor deposition (CVD) promises a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior electronic properties in comparison with exfoliated samples. Here we test the electrical transport properties of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing-induced contamination, are substantially reduced. We grow CVD graphene with grain sizes up to 250 μm to abate grain boundaries, and we transfer graphene utilizing a novel, dry-transfer method to minimize chemical contamination. We fabricate devices on both silicon dioxide and hexagonal boron nitride (h-BN) dielectrics to probe the effects of substrate-induced disorder. On both substrate types, the large-grain CVD graphene samples are comparable in quality to the best reported exfoliated samples, as determined by low-temperature electrical transport and magnetotransport measurements. Small-grain samples exhibit much greater variation in quality and inferior performance by multiple measures, even in samples exhibiting high field-effect mobility. These results confirm the possibility of achieving high-performance graphene devices based on a scalable synthesis process.

Jorge M. Garcia...et al., The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h‐BN) flakes is demonstrated. Formation of single‐layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic‐force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h‐BN substrates. The growth is governed by the high mobility of the carbon atoms on the h‐BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms., This work is supported by ONR (N000140610138 and Graphene MURI), AFOSR (FA9550‐11‐1‐ 0010), EFRC Center for Re‐Defining Photovoltaic Efficiency through Molecule Scale Control (award DE‐SC0001085), NSF (CHE‐0641523), NYSTAR, CSIC‐PIF (200950I154), Spanish CAM (Q&C Light (S2009ESP‐1503), Numancia 2 (S2009/ENE‐1477)) and Spanish MEC (ENE2009‐14481‐C02‐02, TEC2011‐29120‐C05‐04, MAT2011‐26534).

We demonstrate THz imaging and time-domain spectroscopy of a single-layer graphene film. The large-area graphene was grown by chemical vapor deposition on Cu-foil and subsequently transferred to a Si substrate. We took a transmission image of the graphene/Si sample measured by a Si:bolometer (pixel size is 0.4-mm). The graphene film (transmission: 36 - 41%) is clearly resolved against the background of the Si substrate (average transmission: 56.6%). The strong THz absorption by the graphene layer indicates that THz carrier dynamics are dominated by intraband transitions. A theoretical analysis based on the Fresnel coefficients for a metallic thin film shows that the local sheet resistance varies across the sample from 420 to 590 Ohm, consistent with electron mobility ~ 3,000 cm 2 V -1 s -1 . We also measured time-resolved THz waveforms through the Si substrate and the graphene/Si sample. The waveforms consist of a series of single-cycle THz pulses: a directly transmitted pulse, then subsequent "echos" corresponding to multiple reflections from the substrate. The amplitude difference between graphene/Si pulses and Si pulses becomes more pronounced as the pulses undergo more reflections. From these measurements, we obtained spectrally flat transmission spectra of the transmitted pulses and the average sheet resistance 480 Ohm, consistent with the results of the power transmission measurement. The flat spectral responses indicate that the carrier scattering time in our graphene sample is much shorter than the THz pulse duration.

The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here we report three consecutive first-observations in graphene-silicon hybrid optoelectronic devices: (1) ultralow power resonant optical bistability; (2) self-induced regenerative oscillations; and (3) coherent four-wave mixing, all at a few femtojoule cavity recirculating energies. These observations, in comparison with control measurements with solely monolithic silicon cavities, are enabled only by the dramatically-large and chi(3) nonlinearities in graphene and the large Q/V ratios in wavelength-localized photonic crystal cavities. These results demonstrate the feasibility and versatility of hybrid two-dimensional graphene-silicon nanophotonic devices for next-generation chip-scale ultrafast optical communications, radio-frequency optoelectronics, and all-optical signal processing., Comment: Accepted at Nature Photonics, July (2012)

THz imaging and spectroscopy using broadband THz pulses map out the THz carrier dynamics of large-area single-layer graphene. Non-contacting, non-destructive THz probing reveals the local sheet conductivity of the graphene samples.

Graphene's unparalleled strength, stiffness, and low mass per unit area make it an ideal material for nanomechanical resonators, but its relatively low quality factor is an important drawback that has been difficult to overcome. Here, we use a simple procedure to fabricate circular mechanical resonators of various diameters from graphene grown by chemical vapor deposition. In addition to highly reproducible resonance frequencies and mode shapes, we observe a striking improvement of the membrane quality factor with increasing size. At room temperature, we observe quality factors as high as 2400 ± 300 for a resonator 22.5 μm in diameter, about an order of magnitude greater than previously observed quality factors for monolayer graphene. Measurements of quality factor as a function of modal frequency reveal little dependence of Q on frequency. These measurements shed light on the mechanisms behind dissipation in monolayer graphene resonators and demonstrate that the quality factor of graphene resonators relative to their thickness is among the highest of any mechanical resonator demonstrated to date.

We fabricated large arrays of suspended, single-layer graphene membrane resonators using chemical vapor deposition (CVD) growth followed by patterning and transfer. We measure the resonators using both optical and electrical actuation and detection techniques. We find that the resonators can be modeled as flat membranes under tension, and that clamping the membranes on all sides improves agreement with our model and reduces the variation in frequency between identical resonators. The resonance frequency is tunable with both electrostatic gate voltage and temperature, and quality factors improve dramatically with cooling, reaching values up to 9000 at 10 K. These measurements show that it is possible to produce large arrays of CVD-grown graphene resonators with reproducible properties and the same excellent electrical and mechanical properties previously reported for exfoliated graphene.

The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in two-dimensional materials, where even a line defect can divide and disrupt a crystal. These issues take on practical significance in graphene, which is a hexagonal, two-dimensional crystal of carbon atoms. Single-atom-thick graphene sheets can now be produced by chemical vapour deposition on scales of up to metres, making their polycrystallinity almost unavoidable. Theoretically, graphene grain boundaries are predicted to have distinct electronic, magnetic, chemical and mechanical properties that strongly depend on their atomic arrangement. Yet because of the five-order-of-magnitude size difference between grains and the atoms at grain boundaries, few experiments have fully explored the graphene grain structure. Here we use a combination of old and new transmission electron microscopy techniques to bridge these length scales. Using atomic-resolution imaging, we determine the location and identity of every atom at a grain boundary and find that different grains stitch together predominantly through pentagon-heptagon pairs. Rather than individually imaging the several billion atoms in each grain, we use diffraction-filtered imaging to rapidly map the location, orientation and shape of several hundred grains and boundaries, where only a handful have been previously reported. The resulting images reveal an unexpectedly small and intricate patchwork of grains connected by tilt boundaries. By correlating grain imaging with scanning probe and transport measurements, we show that these grain boundaries severely weaken the mechanical strength of graphene membranes but do not as drastically alter their electrical properties. These techniques open a new window for studies on the structure, properties and control of grains and grain boundaries in graphene and other two-dimensional materials.

We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by tuning a gate voltage. These measurements show that the generation of PC is by a photo-thermoelectric effect. The PC displays a factor of ~10 increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power has a linear dependence on the temperature, the inferred graphene thermal conductivity from temperature dependent measurements has a T^{1.5} dependence below ~100 K, which agrees with recent theoretical predictions.

5 pages, 4 figures.-- Printed version published May 14, 2008., Supporting information available: A detailed description of fabrication technique, a description of the FEM model, a comparison of the FEM model to analytical predictions for a beam under tension as well as recent simulations on nanotubes with slack, and a detailed description of the SFM technique to detect mechanical vibrations. Available at: http://pubs.acs.org/doi/suppl/10.1021/nl080201h/suppl_file/nl080201h-file002.pdf, We carried out measurements on nanoelectromechanical systems based on multilayer graphene sheets suspended over trenches in silicon oxide. The motion of the suspended sheets was electrostatically driven at resonance using applied radio frequency voltages. The mechanical vibrations were detected using a novel form of scanning probe microscopy, which allowed identification and spatial imaging of the shape of the mechanical eigenmodes. In as many as half the resonators measured, we observed a new class of exotic nanoscale vibration eigenmodes not predicted by the elastic beam theory, where the amplitude of vibration is maximum at the free edges. By modeling the suspended sheets with the finite element method, these edge eigenmodes are shown to be the result of nonuniform stress with remarkably large magnitudes (up to 1.5 GPa). This nonuniform stress, which arises from the way graphene is prepared by pressing or rubbing bulk graphite against another surface, should be taken into account in future studies on electronic and mechanical properties of graphene., The research has been supported by a EURYI grant and FP6-IST-021285-2 and by the NSF through the Cornell Center for Materials Research. Sample fabrication was performed at the Cornell Nanoscale Science and Technology Facility, a National Nanotechnology Infrastructure Network node, funded by NSF.

Two-dimensional (2D) atomic materials such as graphene and transition metal dichalcogenides (TMDCs) have attracted significant research and industrial interest for their electronic, optical, mechanical, and thermal properties. While large-area crystal growth techniques such as chemical vapor deposition have been demonstrated, the presence of grain boundaries and orientation of grains arising in such growths substantially affect the physical properties of the materials. There is currently no scalable characterization method for determining these boundaries and orientations over a large sample area. We here present a second-harmonic generation based microscopy technique for rapidly mapping grain orientations and boundaries of 2D TMDCs. We experimentally demonstrate the capability to map large samples to an angular resolution of ±1° with minimal sample preparation and without involved analysis. A direct comparison of the all-optical grain orientation maps against results obtained by diffraction-filtered dark-field transmission electron microscopy plus selected-area electron diffraction on identical TMDC samples is provided. This rapid and accurate tool should enable large-area characterization of TMDC samples for expedited studies of grain boundary effects and the efficient characterization of industrial-scale production techniques.

We demonstrate the enhanced four-wave mixing of monolayer graphene on slow-light silicon photonic crystal waveguides. 200-μm interaction length, a four-wave mixing conversion efficiency of −23 dB is achieved in the graphene-silicon slow-light hybrid, with an enhanced 3-dB conversion bandwidth of about 17 nm. Our measurements match well with nonlinear coupled-mode theory simulations based on the measured waveguide dispersion, and provide an effective way for all-optical signal processing in chip-scale integrated optics.

The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

We demonstrate terahertz (THz) imaging and spectroscopy of a 15x15-mm^2 single-layer graphene film on Si using broadband THz pulses. The THz images clearly map out the THz carrier dynamics of the graphene-on-Si sample, allowing us to measure sheet conductivity with sub-mm resolution without fabricating electrodes. The THz carrier dynamics are dominated by intraband transitions and the THz-induced electron motion is characterized by a flat spectral response. A theoretical analysis based on the Fresnel coefficients for a metallic thin film shows that the local sheet conductivity varies across the sample from {\sigma}s = 1.7x10^-3 to 2.4x10^-3 {\Omega}^-1 (sheet resistance, {\rho}s = 420 - 590 {\Omega}/sq)., Comment: 6 pages, 5 figures

Using an atomic force microscope, we measured effective spring constants of stacks of graphene sheets (less than 5) suspended over photolithographically defined trenches in silicon dioxide. Measurements were made on layered graphene sheets of thicknesses between 2 and 8nm, with measured spring constants scaling as expected with the dimensions of the suspended section, ranging from 1to5N∕m. When our data are fitted to a model for doubly clamped beams under tension, we extract a Young’s modulus of 0.5TPa, compared to 1TPa for bulk graphite along the basal plane, and tensions on the order of 10−7N.

We demonstrate the enhanced four-wave mixing generated in silicon photonic crystal waveguides with monolayer graphene. An enhanced high conversion efficiency and wide detuning bandwidth is observed.