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We present self-consistent electrothermal simulations of the GaN nanowire-based field-effect transistor (NWFET) and vertical fin field-effect transistor (FinFET) by taking into account all major heat flux paths. Simulation results of a NWFET validated by experimental data are compared to the results of a vertical FinFET designed with same sizes that ensures a fair comparison of their thermal performance. It is found that the peak temperature in the NWFET is close to the uppermost contact, which facilitates heat removal from top. As a result, NWFETs have the potential to achieve a higher power density at a temperature limit compared with the FinFETs, especially when the heat removal from the top contact is eased. The impact of the thermal surface resistance of the top contact and substrate thinning on the thermal performance of these two vertical structures is also investigated.

Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device.

We develop a three-dimensional finite element model in order to predict the resulting temperature distribution of a radiofrequency ablation (RFA) treatment in human kidneys. Here, a strong cooling effect results from a high degree of blood perfusion, which is modeled via two different approaches. The influence of big blood vessels for treatments close to renal hilus is modeled by including a cylindrical cooling tube based on the renal artery (or vein) in the kidney model. The influence of the perfusion of small arterioles and capillaries is represented by Pennes' approach in the bioheat equation. The experimental validation is performed by an in vivo RFA treatment on porcine kidney. Prior to the in vivo measurements several ex vivo experiments on fresh kidneys are carried out as a plausibility check for the model. During the treatments temperature profiles are measured using thermocouples which are radially arranged around the RFA applicator trocar. The evaluated data for each sensor show a deviation between 0.01 and 12 % from the simulation results. The approach serves for the design of a preplanning tool for RFA treatment in the future.

Surface structuring with ultrashort laser pulses is of high interest as a scalable doping technique as well as for surface nanostructuring applications. By depositing a layer of antimony before the irradiation of ZnO, we were able to incorporate a large quantity of Sb atoms into the single crystalline region of the laser modified surface for potential p-type doping. We have studied the incorporation of antimony and the material properties of laser-induced periodic surface structures (LIPSS) on c-plane ZnO upon femtosecond laser processing at two different peak fluences. We observe high spatial frequency LIPSS with structure periods from 200–370 nm and low spatial frequency LIPSS with periods of 600–700 nm. At a fluence of 0.8 J/cm2, close the ablation threshold of ZnO, the LIPSS are single crystalline except for a few nanometers of amorphous material. At a peak laser fluence of 3.1 J/cm2, they consist of polycrystalline and single crystalline ZnO areas. However, the polycrystalline part dominates with a thickness of about 500 nm.

In this contribution we have studied the diffusion of Al in AlAs/GaAs distributed Bragg-reflectors using the high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) intensity. The measured intensity is normalized to the intensity of the incoming electron beam using a detector scan. The normalized intensity can be directly compared with a set of frozen lattice simulations yielding specimen thickness in regions with known composition or concentration in regions with known thickness. The thickness was evaluated both from GaAs and AlAs regions yielding that the specimen was about 15 nm thinner in AlAs regions due to oxidation. For the concentration evaluation the thickness was derived from GaAs regions and concentrations up to 1.2 were found due to the overestimated thickness. Concentration profiles were scaled down to 1.0 and fitted to the solution of Fick's laws.