1. Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
- Author
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He Qian, Weiguo Hu, Bin Gao, Qilin Hua, Taiping Zhang, Zhong Lin Wang, Huaqiang Wu, Renrong Liang, Chunsheng Jiang, Weijun Cheng, Junlu Sun, Guoyun Gao, Qijun Sun, and Jinran Yu
- Subjects
Materials science ,Science ,General Physics and Astronomy ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,Integrated circuit ,01 natural sciences ,Article ,General Biochemistry, Genetics and Molecular Biology ,law.invention ,law ,Power electronics ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,Electronic devices ,Electronics ,Leakage (electronics) ,010302 applied physics ,Multidisciplinary ,business.industry ,Subthreshold conduction ,Transistor ,General Chemistry ,021001 nanoscience & nanotechnology ,Chip ,Electrical and electronic engineering ,Semiconductor ,Optoelectronics ,0210 nano-technology ,business ,Hardware_LOGICDESIGN - Abstract
Power dissipation is a fundamental issue for future chip-based electronics. As promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling dimensions and reducing off-state currents. However, field-effect transistors based on two-dimensional materials are still confronted with the fundamental thermionic limitation of the subthreshold swing of 60 mV decade−1 at room temperature. Here, we present an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary threshold switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV decade−1 subthreshold swing (over five decades). This is achieved by using the negative differential resistance effect from the threshold switch to induce an internal voltage amplification across the MoS2 channel. Notably, in such devices, the simultaneous achievement of efficient electrostatics, very small sub-thermionic subthreshold swings, and ultralow leakage currents, would be highly desirable for next-generation energy-efficient integrated circuits and ultralow-power applications., Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec subthreshold swing over five decades.
- Published
- 2020