1. Light-Assisted Resistance Collapse in a V2O3 -Based Mott-Insulator Device
- Author
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Mariela Menghini, Andrea Ronchi, Francesco Banfi, Jean-Pierre Locquet, Gabriele Ferrini, Stefania Pagliara, Claudio Giannetti, Marco Gandolfi, Paolo Franceschini, and Pia Homm
- Subjects
Materials science ,business.industry ,Mott insulator ,Phase (waves) ,General Physics and Astronomy ,Biasing ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,01 natural sciences ,law.invention ,Electrical resistivity and conductivity ,law ,0103 physical sciences ,Optoelectronics ,010306 general physics ,0210 nano-technology ,business ,Joule heating ,Excitation ,Voltage - Abstract
The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure and light excitation. The ultimate goal is to achieve the complete control of the electronic phase transformation, with dramatic impact on the performance, for example, of resistive switching devices. Here, we investigate the simultaneous effect of external voltage and excitation by ultrashort light pulses on a single Mottronic device based on a V$_2$O$_3$ epitaxial thin film. The experimental results, supported by finite-element simulations of the thermal problem, demonstrate that the combination of light excitation and external electrical bias drives a volatile resistivity drop which goes beyond the combined effect of laser and Joule heating. Our results impact on the development of protocols for the non-thermal control of the resistive switching transition in correlated materials.
- Published
- 2021
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