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We measured the thermal properties of Nd:Lu₃Sc₁.₅Ga₃.₅O₁₂ (Nd:LuSGG) crystal, including the thermal expansion coefficient, specific heat, and thermal diffusion coefficient. The calculated thermal conductivity is 4.4 W/mK at room temperature. A high-power continuous-wave and passively Q-switched Nd:LuSGG laser was also demonstrated. Continuous-wave output power of 6.96 W is obtained which is the highest power with this material. For the first time to our knowledge, the passively Q-switched Nd:LuSGG laser is reported with the shortest pulse width, largest pulse energy, and highest peak power are achieved to be 5.1 ns, 62.5 μJ, and 12 kW, respectively. By spectral analysis, it has been found that the Nd:LuSGG laser was located at 1059 nm under low pump power, and became dual-wavelength at 1061.5 and 1059 nm when the incident pump power is over 2.27 W. The generating mechanism of dual-wavelength laser is also discussed.

A series of laser crystals Nd:LuxGd1-xVO4 (x=0.14,0.32,0.50,0.61,0.70,0.80) was grown by the Czochralski method. The thermal properties, including the average linear thermal expansion coefficients, thermal diffusion coefficients, specific heats, and thermal conductivities, of the mixed crystals were obtained. The material constants Ms for the thermal stress resistance figure were calculated and showed that the thermal fracture limits of the mixed crystals should be comparable with that of Nd:YVO4. The polarization absorption spectra from 240 to 1000 nm were measured at room temperature and the absorption cross sections at 809 nm were calculated. Using the Judd-Ofelt theory, the theoretical radiative lifetimes were calculated and compared with the experimental results. Continuous wave laser performances were achieved with the mixed crystals at the wavelength of 1.06 μm when they were pumped by a laser diode. Thermal, optical, and laser properties have shown variation as a function of x and proved that the mixed crystals are good laser materials. [ABSTRACT FROM AUTHOR]

A diode pumped passively mode-locked Nd:LuVO4 laser with a semiconductor saturable-absorber mirror (SESAM) is demonstrated. The mode-locked pulses have a pulse duration of about 8.8 ps and a repetition rate of 157 MHz. Under an absorbed pump power of 12 W a maximum output power of 3.71 W is obtained, which gives an optical conversion efficiency of 31%. Our results show that Nd:LuVO4 is a promising gain medium for the high power mode-locked solid-state lasers. [ABSTRACT FROM AUTHOR]