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Pumped by a Ti:sapphire laser, a passively Q-switched laser oscillation from an unprocessed Nd:LaB3O6 cleavage microchip with a Cr4+:YAG saturable absorber has been demonstrated. The influence of the transmission of the output coupler on the pulse width and repetition rate at various absorbed pump powers has been investigated. A pulse with 2.8 μJ energy, 2.2 ns duration, and 29 kHz repetition rate at 1060 nm was obtained at the absorbed pump power of 1.25 W and output coupler transmission of 3.2%, which results in 1.25 kW peak power. The polarization and spectral properties of laser radiation were measured. [ABSTRACT FROM AUTHOR]

The improvement of the laser performances of an unprocessed 5.6 at. % Nd3+:LaB3O6 cleavage microchip has been reported. Pumped by a Ti:sapphire laser at 871 nm, quasi-cw output laser power up to 395 mW around 1060 nm wavelength with slope efficiency near 52% has been obtained in an end-pumped plano-plano resonator. The influence of the ratio between the cavity mode and pump beam area on the laser performances and laser spectra at various output powers has been investigated. The experimental results have shown that the cleavage technique can become a practical and effective method to obtain the microchip laser medium easily and directly. [ABSTRACT FROM AUTHOR]

Presents a study which examined the relationship of the performance of a double-heterostructure (DH) laser with various polishing techniques used for gallium arsenide (GaAs) substrates preparation. Description of the process of polishing; Fabrication of broad-area laser diodes; Results for DH lasers with GaAs active regions.

End-pumped by a single-stripe 805-nm diode laser, a maximum continuous-wave output power of 290 mW with slope efficiency of 42% and 90 mW with slope efficiency of 44% around 2 µm were achieved in a 1.6-mm-thickness, unprocessed 7.2 at.% Tm3+:BaGd2(MoO4)4 cleavage plate in a hemispherical and plano–plano cavities, respectively, when the absorbed pump power was 830 mW. The dependence of the polarization of output laser on the output coupler transmission was investigated. The influence of upconversion on the laser performance was analyzed. The results show that the unprocessed Tm3+:BaGd2(MoO4)4 cleavage plate is a promising 2-µm laser gain medium pumped by diode laser around 808 nm. [ABSTRACT FROM AUTHOR]

An Er:Yb:Sr3Gd2(BO3)4 crystal was grown by the Czochralski method. The polarized spectral properties of the crystal were investigated, including the polarized absorption and fluorescence spectra and fluorescence decay. The fluorescence quantum efficiency of the upper laser level 4I13/2 of Er3+ ions and the efficiency of the energy transfer from Yb3+ to Er3+ ions were calculated. End-pumped by a diode laser at 970 nm in a hemispherical cavity, a 1.6 W quasi-cw laser at 1.5–1.6 μm with a slope efficiency of 18% and an absorbed pump threshold of 5.9 W was achieved in a 1.8-mm-thick Z-cut Er:Yb:Sr3Gd2(BO3)4 crystal. This crystal has a flat and broad gain curve at 1.5–1.6 μm and so is also a potential gain medium for tunable and short pulse lasers. [ABSTRACT FROM AUTHOR]

A Bi2(MoO4)3 single crystal doped with Pr3+ ions has been grown by the Czochralski technique. The polarized absorption and fluorescence spectra as well as the fluorescence decay curve of Pr3+ ions in the crystal were measured at room temperature. The spectroscopic parameters, including the Judd–Ofelt intensity parameters Ωt (t=2, 4, and 6), spontaneous emission probabilities, fluorescence branching ratios, radiative lifetimes, stimulated emission cross sections, and fluorescence quantum efficiencies, were calculated. The spectral properties related to laser performance of this crystal were analyzed. The 1 D 2 multiplet of the crystal may be a good upper level for a solid-state laser. [ABSTRACT FROM AUTHOR]

An Er3+/Yb3+-codoped Li6Y(BO3)3 crystal was grown by the Czochralski method. The polarized absorption spectra and the fluorescence decay curve were recorded. The efficiency of energy transfer from Yb3+ to Er3+ ions was estimated. Quasi-continuous-wave output power of 325 mW at 1594 nm was realized under the absorbed pump power of 10.4 W in a hemispherical cavity. The absorbed pump threshold and slope efficiency of the laser are 6.0 W and 7.2%, respectively. [ABSTRACT FROM AUTHOR]