1,247 results on '"ARSENIC compounds"'
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2. Triggering GaAs lock-on switches with laser diode arrays
3. Subnanosecond, high voltage photoconductive switching in GaAs
4. Triggering GaAs lock-on switches with laser diode arrays
5. Photoabsorption modulation in GaAs: Ga sub 1-x In sub x as strained-layer superlattices
6. Investigation of ultrafast photothermal surface expansion and diffusivity in GaAs via laser-induced dynamic gratings
7. Condensed matter research using the UCSB FEL. [Univ. of California, Santa Barbara Free Electron Laser project]
8. (Electron transfer rates at semiconductor/liquid interfaces)
9. Study and development of tunable, single mode AlGaAs/GaAs lasers
10. Photogenerated carrier-induced reaction on semiconductor surfaces
11. Double metal waveguide InGaAs/AlInAs quantum cascade lasers emitting at 24 μm
12. Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions
13. Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning
14. Ganvix, Inc. and the Industrial Tech Research Institute Enter Pioneering Joint Venture to Commercialize Innovative Laser Technology
15. Excitation Power Dependence Of Photoluminescence From GaAs Quantum Dot Prepared By Droplet Epitaxy Method
16. Electroluminescence of quantum-dash-based quantum cascade laser structures
17. Investigators from Federal University Sao Carlos Target Life Science [Nitric Oxide Storage Levels Modulate Vasodilation and the Hypotensive Effect Induced By Photobiomodulation Using an Aluminum Gallium Arsenide (Algaas) Diode Laser (660 Nm)]
18. Second-order Bragg gratings in single-mode chalcogenide fibres
19. Amplified luminescence and output characteristics of high-power InGaAs/AlGaAs laser diode arrays
20. Stokes parameters of the radiation of transverse-single-mode InGaAs/AlGaAs lasers with a quantum-well active region
21. Theoretical description of spontaneous pulse formation in a semiconductor microring laser
22. Direct acoustic phonon excitation by intense and ultrashort terahertz pulses
23. Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
24. Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation
25. The cyclotron resonance in Heterostructures with the InSb/AlInSb quantum wells
26. Fabrication-tolerant 1310 nm laterally-coupled distributed feedback lasers with high side mode suppression ratios
27. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes
28. 808-nm laser diode bars based on epitaxially stacked double heterostructures
29. Dual-wavelength laser diodes based on epitaxially stacked heterostructures
30. Amplification of terahertz radiation on transitions between Wannier - Stark ladders in weak-barrier superlattices
31. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors
32. Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers
33. Gain-Induced Trapping of Microcavity Exciton Polariton Condensates
34. GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 {mu}m
35. High performance tunnel injection quantum dot comb laser
36. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide
37. Intraminiband Relaxation In Doped GaAs/AlGaAs Superlattices Studied By Two-Color Infrared Pump-Probe Experiments
38. Temperature and current dependences of the lasing spectrum's width of quantum dot lasers
39. High-power diode lasers ({lambda} = 1.7-1.8 {mu}m) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures
40. Integrated diagnostics of heterostructures with QW layers
41. Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation
42. Vertical-external-cavity surface-emitting 625-nm laser upon optical pumping of an InGaP/AlGaInP nanostructure with a Bragg mirror
43. High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 {mu}m
44. Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
45. Sources of Helicity-correlated Electron Beam Asymmetries
46. Structural, magnetic, and transport properties of laser-annealed GaAs:Mn-H
47. Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effect
48. Lasing and polariton condensation: Two distinct transitions in GaAs microcavities with stress traps
49. Microstructure and texture developments in multiple pulses excimer laser crystallization of GaAs thin films
50. Stimulated-emission wavelength switching in optically pumped InGaAs/AlGaInAs laser heterostructures
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