Author: "Borany, J.V." / Topic: lanthanum compounds - Searchworks@Jio Institute Digital Library Search Results

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Start Over Author "Borany, J.V." Topic lanthanum compounds

Author: Lehmann, J., Hübner, R., Borany, J.V., Skorupa, W., Mikolajick, T., Schäfer, A., Schubert, J., and Mantl, S.
Subjects: *INCOHERENT light annealing, *LANTHANUM compounds, *DIELECTRICS, *TITANIUM nitride, *METAL oxide semiconductor capacitors, *STRAY currents
Abstract: Highlights: [•] LaLuO3 and LaScO3 layers were treated by flash lamp annealing. [•] FLA does not affect the very low leakage currents or the k-values of and LaScO3. [•] TiN oxidation in a gate-first processing scheme can be prevented by a Si-cap on TiN. [•] MOS capacitors are evaluated for oxide charges. [Copyright &y& Elsevier]
Published: 2013
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Author: Lehmann, J., Shevchenko, N., Mücklich, A., Borany, J.v., Skorupa, W., Schubert, J., Lopez, J.M.J., and Mantl, S.
Subjects: *METAL oxide semiconductors, *CAPACITORS, *DIELECTRICS, *LANTHANUM compounds, *MICROSTRUCTURE, *HEAT treatment, *RARE earth oxides, *ELECTRIC properties of thin films
Abstract: Abstract: Metal-oxide-semiconductor capacitors containing the alternative high-k dielectric LaLuO3 were treated by flash lamp annealing (FLA). Capacitance–voltage (C–V) and current–voltage (J–V) characteristics reveal an increase in the capacitance for the flashed samples while the very low leakage current of the LaLuO3 is retained. Microstructural investigations confirm the thermal stability of the film even after FLA at 1200°C, 20ms. [Copyright &y& Elsevier]
Published: 2011
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