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The Switched Dose Rate technique is investigated when devices do not exhibit ELDRS. Experimental data and modeling results are presented and discussed in terms of hardness assurance. It is shown, for devices that do not show ELDRS, that a time is required before the switched devices reach the LDR curve. As a solution, it is proposed to apply an annealing between the HDR and the LDR irradiation. [ABSTRACT FROM PUBLISHER]

During irradiation testing of RAMs, various failure scenarios may occur which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them. [ABSTRACT FROM PUBLISHER]

The aim of this work is to provide a method to calculate single event upset (SEU) cross sections by using experimental data. Valuable tools such as PROFIT and SIMPA already focus on the calculation of the proton cross section by using heavy ions cross-section experiments. However, there is no available tool that calculates heavy ion cross sections based on measured proton cross sections with no knowledge of the technology. We based our approach on the diffusion-collection model with the aim of analyzing the characteristics of transient currents that trigger SEUs. We show that experimental cross sections could be used to characterize the pulses that trigger an SEU. Experimental results allow yet defining an empirical rule to identify the transient current that are responsible for an SEU. Then, the SEU cross section can be calculated for any kind of particle and any energy with no need to know the Spice model of the cell. We applied our method to some technologies (250 nm, 90 nm and 65 nm bulk SRAMs) and we show that the proton (respectively heavy ions) cross-section curve can be obtained without any further parameter when the heavy ion (respectively protons) cross-section curve is known. [ABSTRACT FROM PUBLISHER]

This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs. [ABSTRACT FROM PUBLISHER]

The synergistic effect between displacement damage dose (DDD) and analog transient radiation effects on electronics (ATREE) in an operational amplifier (LM124) (opamp) from three different manufacturers is investigated. Pulsed X-ray experiments have highlighted ATREE sensitivity on devices significantly more important following exposure to fission neutrons than for unirradiated devices. A previously developed simulation tool is used to model ATREE responses taking into account the electrical parameters degradation due to displacement damage phenomenon. A good agreement is observed between model outputs and experimental ATREE results. [ABSTRACT FROM PUBLISHER]

Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defect formation. This work addresses the limits of the post-irradiation gate stress relevance used for Power MOSFETs space qualification. [ABSTRACT FROM PUBLISHER]

The synergistic effect between Total Ionizing Dose (TID) and Analog Single Event Transient (ASET) in LM124 operational amplifiers (opamps) from three different manufacturers is investigated. This effect is clearly identified on only two manufacturers by three, highlighting manufacturer dependent. In fact, significant variations were observed on both the TID sensitivity and the ASET response of LM124 devices from different manufacturers. Hypotheses are made on the cause of the differences observed. A previously developed ASET simulation tool is used to model the transient response. The effects of TID on devices are taken into account in the model by injecting the variations of key electrical parameters obtained during Co^60 irradiation. An excellent agreement is observed between the experimental responses and the model outputs, independently of the TID level, the bias configuration and the manufacturer of the device. [ABSTRACT FROM PUBLISHER]

Heavy ion-induced Power MOSFET's reliability degradation has been studied. Irradiations were realized at low and high energy with the same electronic stopping power at the surface of the die. For both energies, a decrease of the charge to breakdown has been observed after irradiation. However, an enhanced degradation of the oxide layer reliability is observed at low energy. The lifetime reduction at high energy is correlated to local disorder along the ion track that can act as precursor damage. On the other hand, the most important reliability degradation at low energy is attributed to a synergy effect between ionizing and non-ionizing processes. Clusters of defects can indeed be formed, adding an additional wear-out mechanism. These results may be significant in the frame of Single Event Testing [ABSTRACT FROM AUTHOR]

As an accelerated test to characterize bipolar devices, the switched dose rate technique is a suitable solution for obtaining the entire low dose rate curve. Several sets of devices are first irradiated at high dose rate. Subsequently, all the sets are irradiated at low dose rate at the same time, which saves a considerable amount of time. The overall low dose rate curve is reconstructed by translating the individual curves obtained at low dose rate so that they form a continuous curve. The main issue of such a technique is that it requires several sets of devices. In this paper, optimization tools are presented to reduce the number of device sets and guidelines for their use are given. [ABSTRACT FROM PUBLISHER]

A controlled microbeam facility based on electron-beam lithography is demonstrated as a means of observing total dose induced compensation effects on circuit parameters and understanding degradation mechanisms. The system uses electron-beam lithography techniques to perform on-chip microbeam irradiations on individual transistors or sub-circuits without any irradiation of the neighboring transistors. An experimental validation of the mechanisms proposed to explain the sensitivity of the input current of the LM139 as an illustration of this technique is provided [ABSTRACT FROM AUTHOR]

Presents a study that developed a model to evaluate both the optimum temperature and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar junction transistors. Information on the extraction of the model parameters; Comparison between degradation and the temperature of the devices; Analysis of the effect of an ionizing environment on bipolar-junction transistors.

Presents a study that assessed the results of proton irradiation in a commercial off-the-shelf charge-coupled device (CCD). Investigation of the mean dark current of the CCD; Examination of the mean dark-current function of non-ionizing energy loss; Analysis of the appearance of dark-signal nonuniformity pixel to pixel after proton irradiation.

Focuses on a study that investigated the effect of high-temperature irradiation on commercial bipolar junction transistors for four dose rates. Experimental procedure and results; Discussion; Conclusion.