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Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin (≈55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiation-induced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stress-related viscoelastic flow being the dominant mechanisms of dimensional change. [ABSTRACT FROM AUTHOR]

Copper indium diselenide (CIS), along with its derivatives Cu(In,Ga)(Se,S)2, is a prime candidate for use in the absorber layers of photovoltaic devices. Due to its ability to resist radiation damage, it is particularly well suited for use in extraterrestrial and other irradiating environments. However, the nature of its radiation hardness is not well understood. In this study, transmission electron microscopy (TEM) with in situ ion irradiation was used to monitor the dynamic microstructural effects of radiation damage on CIS. Samples were bombarded with 400 keV xenon ions to create large numbers of atomic displacements within the thickness of the TEM samples and thus explore the conditions under which, if any, CIS could be amorphized. By observing the impact of heavily damaging radiation in situ-rather than merely the end-state possible in ex situ experiments-at the magnifications allowed by TEM, it was possible to gain an understanding of the atomistic processes at work and the underlying mechanism that give rise to the radiation hardness of CIS. At 200 K and below, it was found that copper-poor samples could be amorphized and copper-rich samples could not. This difference in behavior is linked to the crystallographic phases that are present at different compositions. Amorphization was found to progress via a combination of one- and two-hit processes. The radiation hardness of CIS is discussed in terms of crystallographic structures/defects and the consequences these have for the ability of the material to recover from the effects of displacing radiation. [ABSTRACT FROM AUTHOR]

Nanocrystalline metals are considered highly radiation-resistant materials due to their large grain boundary areas. Here, the existence of a grain size threshold for enhanced irradiation resistance in high-temperature helium-irradiated nanocrystalline and ultrafine tungsten is demonstrated. Average bubble density, projected bubble area and the corresponding change in volume were measured via transmission electron microscopy and plotted as a function of grain size for two ion fluences. Nanocrystalline grains of less than 35 nm size possess ∼10–20 times lower change in volume than ultrafine grains and this is discussed in terms of the grain boundaries defect sink efficiency. IMPACT STATEMENT A grain size threshold in nanocrystalline and ultrafine tungsten has been shown to exist for enhanced irradiation-resistance performance during high-temperature helium irradiation. [ABSTRACT FROM PUBLISHER]

Sputtering yields, enhanced by more than an order of magnitude, have been observed for 80 keV Xe ion irradiation of monocrystalline Au nanorods. Yields are in the range 100-1900 atoms/ion compared with values for a flat surface of ≈50. This enhancement results in part from the proximity of collision cascades and ensuing thermal spikes to the nanorod surfaces. Molecular dynamic modeling reveals that the range of incident angles occurring for irradiation of nanorods and the larger number of atoms in "explosively ejected" atomic clusters make a significant contribution to the enhanced yield. [ABSTRACT FROM AUTHOR]