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The Hubble Space Telescope has been at the forefront of discoveries in the field of astronomy for more than 20 years. It was the first telescope designed to be serviced in space and the last such servicing mission occurred in May 2009. The question of how much longer this valuable resource can continue to return science data remains. In this paper a detailed analysis of the total dose exposure of electronic parts at the box level is performed using solid angle sectoring/3-dimensional ray trace and Monte Carlo radiation transport simulations. Results are related to parts that have been proposed as possible total dose concerns. The spacecraft subsystem that appears to be at the greatest risk for total dose failure is identified. This is discussed with perspective on the overall lifetime of the spacecraft. [ABSTRACT FROM PUBLISHER]

Proton-induced single-event effects hardness assurance guidelines are developed to address issues raised by recent test results in advanced IC technologies for use in space environments. Specifically, guidelines are developed that address the effects of proton energy and angle of incidence on single-event latchup and the effects of total dose on single-event upset. The guidelines address both single-event upset (SEU), single-event latchup (SEL), and combined SEU and total ionizing dose (TID) effects. [ABSTRACT FROM AUTHOR]

Total ionizing dose (TID) strongly affects the Single Event Transient (SET) sensitivity of a bipolar linear voltage comparator (LM139). The general rule that transistors in the non-conducting state are the most sensitive to SETs was verified, with some exceptions. The mechanisms responsible for those exceptions were identified and explained using circuit analysis. In the non typical behavior, a correlation of the degradation of the amplifier stages with the shape of the transient output signal was established. Following total dose exposure the SETs generally exhibit a reduction in amplitude due to the degradation of the slew rate. However, in some cases the transient signal is amplified because degradation of either the current source or of the current gain of some transistors forces the output transistor to the edge of conduction, so that it behaves like a voltage amplifier and amplifies the parasitic transient signal. Laser testing demonstrates that ASET sensitivity also is affected by TID degradation of transistors that are not directly hit by the laser. [ABSTRACT FROM AUTHOR]

An advanced commercial 2Gbit NAND flash memory (90 nm technology, one bit/cell) has been characterized for TID and heavy ion SEE. Results are qualitatively similar to previous flash results in most respects, but we also detected a new dynamic failure mode. [ABSTRACT FROM AUTHOR]