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Ultra-fast high-temperature microwave annealing at temperatures as high as 2050 °C for 30 s has been performed on phosphorus ion-implanted 4H-SiC for phosphorus doping concentrations in the range 5×1019 cm-3-8×1020 cm-3. For comparison, inductive heating furnace anneals were performed at 1800 °C-1950 °C for 5 min. Electrical resistivity of the P+-implanted samples decreased with increasing annealing temperature reaching a minimum value of 6.8×10-4 Ωcm for 2050 °C/30 s microwave annealing and a slightly higher value for 1950 °C/5 min inductive heating furnace annealing. X-ray rocking curve measurements showed that the microwave annealing not only removed the lattice damage introduced by the ion-implantation process, but also the defects present in the original virgin sample as well. [ABSTRACT FROM AUTHOR]