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Presents experimental results that provide insight to damage generation and annealing processes involved in ion implantation. Transient enhanced diffusion across multiple anneals; Dopant redistribution and solubility effects; Practical modeling approaches to support technology development.

Investigates the effect of extrinsic background doping in silicon on the transient enhancement of dopant diffusion for an ion-implanted dopant to gain insight into the role of point defect charge states. Increase in the transient effect for extrinsic background doping; Variations in transient diffusivity.

Investigates the transient phosphorus (P) diffusion in silicon following implantation with silicon or argon ions at low doses. Observation of P diffusion due to the defect ingredients; Differences in the initial defect distributions; Importance of bulk recombination in determining defect distributions.