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Your search keyword '"Recaman Payo M."' showing total 1 results
Start Over Author "Recaman Payo M." Topic intrinsic amorphous silicon
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1. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation.

Author

Meddeb, H., Bearda, T., Recaman Payo, M., Abdelwahab, I., Abdulraheem, Y., Ezzaouia, H., Gordon, I., Szlufcik, J., and Poortmans, J.

Subjects
*AMORPHOUS silicon, *WETTING, *BORON, *DOPING agents (Chemistry), *N-type semiconductors, *PASSIVATION
Abstract

The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm 2 and below. [ABSTRACT FROM AUTHOR]

Published
2015
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