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Nanogrinding was conducted on soft-brittle cadmium zinc telluride (CdZnTe or CZT) wafers using a ceramic bond ultrafine diamond wheel. Surface roughness Ra and PV achieved by nanogrinding are 1.5 and 12.2 nm, respectively. The highest feed rate was 83.3 nm/r, which is lower than 89 nm that is the critical value of brittle-ductile transition for CZT. As a result, ductile grinding was obtained. A novel model for wafer rotational grinding of undeformed chip thickness was proposed, based on the kinematics and geometric characteristics between wheel and workpiece. The undeformed chip thickness simulated was used to elucidate the fundamental mechanism for nanogrinding conditions, and it is in good agreement with the results found experimentally. [ABSTRACT FROM AUTHOR]

High-speed dicing tests were conducted for silicon wafers using developed ultrathin electroplated diamond blades with metal bond. Chipping and kerf widths of 1.5 and 28 μm, respectively, are achieved by the developed ultrathin diamond blades. The calculated maximum undeformed chip thickness varied from 9.6 to 25.5 nm for various high-speed dicing conditions. The variation tendency between experimental chip width induced by three diamond blades and corresponding calculated maximum undeformed chip thickness is consistent. Scanning electron microscopy showed that the microstructure of diamond dicing blades significantly affected the chip width. [ABSTRACT FROM AUTHOR]