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The article discusses the potential of the wafer bonding technology for the achievement of improved accuracy for bond alignment. Topics include the increase chip performance offered by three-dimensional integrated circuit (3D-IC), the establishment of some 3D-IC in the middle of the fabrication process, and the transformation of the bonding materials to achieve the successful fusion bonding.

The article focuses on the heterogeneous integration and three-dimensional (3D) integrated circuits (ICs) that drives wafer bonding in early 21st century. It says that a modular integration uses the chemical-mechanical polishing (CMP) approach and requires flat wafers with a surface roughness of less than 1 nanometer (nm). It states that 3d integration provides better alignment accuracy than traditional alignment principles based on backside alignment keys or infrared (IR)-transparent wafers.