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The Al/HfOx/AlOy/indium tin oxide (ITO)/polyethylene terephthalate (PET) flexible resistive random access memory (ReRAM) device was fabricated at room temperature to study the effect of AlOy interfacial layer on resistive switching (RS). Incorporating the interfacial layer AlOy improves the cycle-to-cycle, cell-to-cell uniformity and switching resistance ratio (>103). It introduces the oxygen vacancies in HfOx which controls the formation and rupture of filament and plays an important role in improving RS characteristics. The device also maintains the stable switching operation under the flexible condition and at elevated temperature up to 100 °C. The device area and temperature-dependent switching characteristics confirm the Ohmic (hopping) conduction in low-resistance state (LRS) and the space charge-limited conduction (SCLC) in high-resistance state (HRS). [ABSTRACT FROM AUTHOR]

The Al-doped HfOx flexible resistive random access memory (ReRAM) device with Ag top electrode (TE) is fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) with low thermal budget process. The oxygen vacancies created by Al doping may assist Ag inclusion to create/rupture the filament at lower operating voltages (VSET ≈ 0.46 V and VRESET ≈ −0.93 V) and SET/RESET currents (ISET ≈ 2 × 10−5 A and IRESET ≈ 8 × 10−5 A). The Ag/Al:HfOx/ITO/PET ReRAM exhibits highly stable resistive switching (RS) behaviour with lower switching power (PSET ≈ 9.2 µW and PRESET ≈ 74.4 µW). The stable switching parameters like SET/RESET voltages, resistances in high resistance states (HRS) and low resistance states (LRS) are observed even at higher temperature (100 °C) and in flexible condition (i.e. 5 mm dia). The current conduction mechanism in HRS is dominated by space charge limited conduction whereas LRS is not completely Ohmic in nature. The RS mechanism has been explained by the formation of the combined effect of Ag atoms and oxygen vacancies. Considering the improved performance of the ReRAM device fabricated at low-temperature process, it may provide a promising candidate for the low power flexible electronics applications. [ABSTRACT FROM AUTHOR]

The Al-doped HfOx-based resistive memory devices have been fabricated on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) flexible substrate at room temperature. X-ray photoelectron spectroscopy is used to extract the different doping percentage of Al which allows optimizing the switching performance. It improves the cycle-to-cycle and cell-to-cell uniformity of switching parameters by tuning the oxygen vacancies in HfOx layers. The 7.5% Al-doped HfOx-based flexible resistive memory device shows excellent switching characteristics such as resistance ratio (> 103) and retention (~104 s). There is no degradation of memory window under the mechanical strain with bending radius ranging from 25 to 5 mm. The temperature-dependent resistive switching characteristics have also been studied. There is sufficient memory window (> 102) till ~ 104 s at elevated temperature. The I – V curve fitting shows the ohmic (hopping) conduction in low resistance state (LRS) and the trap-controlled space charge limited conduction (SCLC) in high resistance state (HRS), supported by Arrhenius plot. [ABSTRACT FROM AUTHOR]