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Highly efficient 650-nm high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers are presented. Broad-area lasers that are 100-mum wide reach output powers of 3 W and conversion efficiencies of about 40% at 15degC. For 5-mm wide laser bars (filling factor of 20%), maximum output powers of 12 W in continuous-wave (CW) operation and 55 W in quasi-CW mode were obtained. Reliable operation of 5000 h at 800 mW for single emitters and at 5 W for laser bars will be reported. [ABSTRACT FROM PUBLISHER]

Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers emitting at 1150 nm were investigated focusing on the impact of the waveguide design on the laser performance. Using a thick GaAs waveguide layer broad area devices with low vertical divergence of 20° FWHM and reliable operation at a power level of 80-mW/μm stripe width were demonstrated. [ABSTRACT FROM PUBLISHER]

Al-free diode lasers emitting at 930 nm having a broadened step-index waveguide structure and a single active InGaAs quantum well have been realized by MOVPE. The impact of waveguide thickness on device performance has been studied. The highest wall plug efficiency of about 60% has been obtained with diode lasers having a 1-μm-thick waveguide. Increasing the waveguide thickness to 1.5 μm resulted in record low degradation rates below 10-5 h-1 for 3-W output power (100 μm stripe width). The same diode lasers showed a good long-term reliability even at an output power of 4 W. The best beam quality had diode lasers with a 2-μm-thick waveguide, at the expense of a reduced temperature stability [ABSTRACT FROM PUBLISHER]

Distributed Bragg reflector tapered lasers emitting at a wavelength of about 1060 nm were realized. The expitaxial layer structure leads to a vertical far-field angle of 15deg (full-width at half-maximum). The devices with a total length of 4 mm consist of 2-mm-long ridge waveguide and tapered sections. The input currents to both sections can be independently controlled. The laser reached 5-W output power with a narrow spectral linewidth below 40 pm (95% power) and a nearly diffraction-limited beam quality. [ABSTRACT FROM PUBLISHER]

A wavelength-stabilized compact diode laser system emitting at 671 nm mounted on a microoptical bench with the dimensions of 13 mmtimes4 mm is presented. A reflecting Bragg grating was aligned on the rear side of a broad-area gain medium for wavelength stabilization at 671 nm. A maximum output power of 1.5 W was obtained together with a spectral width of 40 pm (full-width at half-maximum). At 1.0 W, a center wavelength stability below 20 pm over 5 h was determined. With these features, the devices are well-suited for spectroscopic applications. [ABSTRACT FROM PUBLISHER]

Highly efficient 670-nm high-power broad-area laser diodes with a single InGaP quantum-well embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers are presented. The developed vertical layer structure leads to a vertical far-field angle of 31deg. At 15degC, 100 mu-m-wide broad-area lasers reach an output power of 5.6 W limited by thermal rollover. The conversion efficiency was 41% at 1.5 W. A 7600-h reliable operation at 1.5 W and a mean time to failure of about 37550 h will be reported. [ABSTRACT FROM PUBLISHER]

Reliable operation of 650-nm broad area laser diodes with InGaP quantum-wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. Mounted on chemical vapor deposition (CVD)-diamond heat spreader and standard C-mounts, the 100-mum stripe width lasers showed reliable operation over 5000 h at 15 degC and 600 mW [ABSTRACT FROM PUBLISHER]

Reliable operation of 650-nm laser bars with GaInP quantum wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. The 5-mm-wide bars consisting of ten emitters with 100-mum-wide stripe width showed reliable operation over 2000 h at 5 W [ABSTRACT FROM PUBLISHER]

650-nm AlGaInP-AlGaAs-based oxide-confined VCSELs are investigated in dependence on the current aperture size. VCSELs with small aperture (a=5 μm) have a maximum continuous-wave (CW) output power of about 1 mW at room temperature. They reach higher operating temperatures (Tmax=55°C), have narrower beam profiles, less transverse modes, and a higher side mode suppression compared to large aperture VCSELs (a>13 μm). The latter devices emit a CW-output power P=3 mW at 20°C. Reliability tests of 655-nm devices show at 20°C an output power of P≍0.4 mW over more than 1000 h and at 40°C P≍0.1 mW over 500 h. [ABSTRACT FROM PUBLISHER]