1. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells.
- Author
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Lin, Yen-Sheng, Yen-Sheng Lin, Ma, Kung-Jeng, Kung-Jeng Ma, Hsu, C., Feng, Shih-Wei, Shih-Wei Feng, Cheng, Yung-Chen, Yung-Chen Cheng, Liao, Chi-Chih, Chi-Chih Liao, Yang, C. C., Yang, C.C., Chou, Chang-Cheng, Chang-Cheng Chou, Lee, Chia-Ming, Chia-Ming Lee, Chyi, Jen-Inn, and Jen-Inn Chyi
- Subjects
INDIUM compounds ,QUANTUM wells ,TRANSMISSION electron microscopy - Abstract
The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%-25% (grown with metal-organic chemical-vapor deposition). A lower nominal indium content led to a better confinement of indium-rich clusters within InGaN quantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2000
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