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This paper reports on the microstructure of SBA‐crystallized polycrystalline Si films and discusses the potential application of SBA for annealing of amorphous IGZO films. A comparison of the crystallized Si films to those produced using ELA reveals that these strikingly differently generated materials are essentially microstructurally identical. We note that SBA (1) accomplishes the feat while providing certain benefits that address the manufacturing‐related ELA issues regarding operating costs and laser mura, (2) can be configured to execute SLS for realizing high‐mobility TFTs, and (3) may further be utilized for optimal heat treatment of IGZO and other materials. [ABSTRACT FROM AUTHOR]