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Focuses on a study that simulated hysteresis and plateau-like behavior of the current-voltage curves of a double-barrier resonant tunneling structure (RTS) in the negative differential resistance region. Numerical technique for modeling the RTS; Numerical results and analysis; Conclusion.

Deals with a study which delineated the physics responsible for hysteresis and that of the high-frequency oscillations for intrinsic resonant tunneling diode structures. Background theory; Nonlinear equivalent circuit model study; Conclusions.

In terms of numerical calculation of the coupled Wigner function-Poisson equations, the explanation to the origin of hysteresis and plateau-like behavior of the I-V characteristics of double barrier resonant tunneling devices is put forth. Several basic physical factors play key roles in the process of electron tunneling. Among these the most important factors are the interference of the injected and the reflected electron waves which leads to the formation of an emitter quantum well, the coupling between the energy level in the main quantum well and that in the emitter quantum well, and the coupling between the energy level in the main quantum well and the conduction band edge or the threedimensional states in the emitter. The interplay of these factors determines the form of the I-V curve of the resonant tunneling structure. The coupling between the energy levels in the emitter quantum-well and the main quantum-well leads to the plateau behavior of the I-V curves. The strength of the coupling determines the average slope of the plateaulike region in the I-V curve. The bias domain that the coupling exists determines the length of the plateau-like structure in the I-V curve. The domain can be controlled by adjusting the width of the barriers. The hysteresis is shown to be a manifestation of the above-mentioned energy level coupling, the coupling between the energy level in the main quantum well and the conduction band edge or the three-dimensional states in the emitter, and the quantitative accumulation and distribution of electrons in the emitter region. This work provides new insight for understanding the nonlinear I-V behavior and establishes a foundation for the future analysis of bistability and oscillation behavior in resonant tunneling structures. [ABSTRACT FROM AUTHOR]