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Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H2+(DH,He= 5.1016 cm-2, at energy 50 and 150 keV, respectively) was investigated by means of X-ray (synchrotron) diffraction, transmission electron microscopy, and electrical measurements. The nanostructured sponge-like buried layers are formed in Si:(He,H) by annealing / high pressure treatment. Decreased interference, diffuse scattering and individual contrast are observed in the synchrotron topograms for HT-HP treated Si:(He,H). The treatment at 723 K and HP results in an additional donor formation as a sequence of the implantation-disturbed layer. The HP-mediated (retarded) out-diffusion of hydrogen and helium is in part responsible for the effects observed. [ABSTRACT FROM AUTHOR]

Abstract: Defect structure of Czochralski grown (111) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy 5MeV, dose 5×1016 cm−2) and annealed at up to 1400K, also under hydrostatic Ar pressure equal to 1.1GPa, has been investigated by high-resolution X-ray diffraction and synchrotron topography at HASY Laboratory. The annealing, especially at 1270 and 1400K, results in precipitation of interstitial oxygen and creation of extended defects. A thermally induced oxygen precipitation at high temperatures–pressures in neutron-irradiated Cz-Si reveals the irradiation-related history of investigated samples. [Copyright &y& Elsevier]

Abstract: Defect structure of Czochralski-grown oxygen-containing silicon–germanium (Si–Ge) samples with Ge content 1.5×1018 cm−3, subjected to processing for 5h at up to 1400K under hydrostatic Ar pressure up to 1.1GPa, has been investigated by synchrotron topography (at HASYLAB), high-resolution X-ray diffraction, photoluminescence and related methods. Ge admixture prevents formation of extended defects at processing done under 105 Pa. Such defects are created, however, in Si–Ge processed at 1400K under high pressure (1.1GPa). [Copyright &y& Elsevier]

Abstract: Processing of electron-irradiated (energy 40 keV, doses up to 2.5 × 1016 cm−) oxygen-containing Czochralski silicon (Cz-Si) at up to 1400 K under hydrostatic Ar pressure up to 1.1 GPa results in oxygen accumulation at irradiation-induced irregularities. As revealed by electrical measurements, treatment at about 720 K produces small oxygen clusters exhibiting thermal donor activity. Processing at 1070–1400 K results, as follows from X-ray (synchrotron) data, in a creation of larger oxygen precipitates. So appropriate processing of electron-irradiated Cz-Si at enhanced temperature-pressure can result in a specific enhancement of irradiation-induced defects, of interest for retrospective dosimetry. [Copyright &y& Elsevier]