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Actively tunable metasurfaces have widespread applications in optics from light modulation, beam steering to LiDAR and many others. Recently, lithium niobate (LN) based metasurfaces have attracted significant attention for their great potentials in integrated electro-optically tunable metadevices. However, the hardness and chemical inactivity of LN make it difficult to process, which severely limits the quality (Q) factors and performance of LN based metasurfaces. In this paper, a type of high Q etchless LN resonant metasurface is experimentally demonstrated. The metasurface shows a measured Q factor of 563 around the telecom wavelength and even higher Q factors are expected to be realized using similar designs in the future. This work represents an important progress for LN resonant metasurfaces and paves the way for the development of high performance electro-optically tunable LN metadevices. • Demonstrate a type of high-Q LN resonant metasurface in telecom wavelength range. • Uses a dielectric-loaded design with subwavelength patterns. • The LN is etchless to avoid the fabrication difficulty. • The measured Q factor of 563 is almost one order higher than the previous work. • Paves the way for the development of high performance EO tunable LN metadevices. [ABSTRACT FROM AUTHOR]

Graphene absorbers have attracted lots of interest in recent years. They provide huge potential for applications such as photodetectors, modulators, and thermal emitters. In this letter, we design a high-quality (Q) factor resonant graphene absorber based on the phase change material Sb2S3. In the proposed structure, a refractive index grating is formed at the subwavelength scale due to the periodical distributions of amorphous and crystalline states, and the structure is intrinsically flat. The numerical simulation shows that nearly 100% absorption can be achieved at the wavelength of 1550 nm, and the Q factor is more than hundreds due to the loss-less value of Sb2S3 in the near-infrared region. The absorption spectra can be engineered by changing the crystallization fraction of the Sb2S3 as well as by varying the duty cycle of the grating, which can be employed not only to switch the resonant wavelength but also to achieve resonances with higher Q factors. This provides a promising method for realizing integrated graphene optoelectronic devices with the desired functionalities. [ABSTRACT FROM AUTHOR]