Search

High-voltage gradual p0–i–n0 junctions of AlxGa1 –xAs1 –ySby with x ~ 0.24 and y ~ 0.05 in the i‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the DX-center of the Si donor impurity, with a thermal activation energy Et = 414 meV, a capture cross section σn = 1.04 × 10–14 cm2, and a concentration Nd = 2.4 × 1015 cm–3. In the heterostructures studied, there were no deep levels associated with dislocations. [ABSTRACT FROM AUTHOR]

We present a theoretical analysis of type-II heterostructures based on the AlInAs/AlGaInAs/AlGaAsSb material system. The band structure is modelled using a 6×6 k · p Hamiltonian that accounts for valence band mixing and strain effects. Design maps are produced and a comparison of possible design routes is made in terms of band structure. [Copyright &y& Elsevier]