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Abstract: This paper presents a combined pulsed I(V)–pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the safe operating area (SOA) of advanced SiGe:C HBTs. System behavior is explained in detail and reproduced by simulation taking into account the influence of all parasitic components. Optimization steps, system verification, measurement results and accuracy issues are presented. [Copyright &y& Elsevier]

Abstract: In this paper, a comprehensive evaluation of the transient self-heating in microwave heterojunction bipolar transistors (HBTs) have been carried out through simulations and measurements. Three dimensional thermal TCAD simulations have been performed to investigate precisely the influence of backend metallization on transient thermal behavior of a submicron SiGe:C BiCMOS technology with f T and f max of 230GHz and 290GHz, respectively. Transient variation of Collector current caused by self-heating is obtained through pulse measurements. For thermal characterization, different electro-thermal networks have been employed at the temperature node of HiCuM compact model. Thermal parameters have been extracted by means of compact model simulation using a scalable transistor library. It has been shown that, the conventional R–C thermal network is not sufficient to accurately model the transient thermal spreading behavior and therefore a recursive network needs to be used. Recursive network is verified with device simulations as well as measurements and found to be in excellent agreement. [Copyright &y& Elsevier]

In this letter, we report a record gate delay of 1.65 ps of a current-mode logic ring oscillator (RO) fabricated with an advanced SiGe:C heterojunction bipolar transistor technology. Outstanding performance has been achieved through process and layout optimization and inductive peaking in series with the load resistor. The RO operates at a single-ended voltage swing of 200 mV. The transistors used in the RO exhibit a peak transit frequency fT of 310 GHz and a peak maximum oscillation frequency f\max of 400 GHz. To the best of our knowledge, a gate delay of 1.65 ps is the fastest result for a bipolar transistor-based technology. [ABSTRACT FROM AUTHOR]

Abstract: This paper presents an extensive evaluation of self-heating in microwave Heterojunction Bipolar Transistors (HBTs). In particular, DC measurements, pulse measurements and low frequency s-parameter measurements have been performed. Pulse measurements are described in detail including optimization and characterization of lumped elements. Thermal parameters have been extracted for a recursive electro-thermal network that has been connected to the temperature node of HiCuM L2. Compact model simulations are verified in time and frequency domain and found to be in very good agreement for various device geometries. The accuracy of the presented approach for thermal capacitance (C TH) extraction has been validated with low frequency y-parameters. [Copyright &y& Elsevier]