1. Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology
- Author
-
Breyer, E. T., Mulaosmanovic, H., Slesazeck, S., and Mikolajick, T.
- Subjects
ddc:621.3 ,Logikgatter, Schwellenspannung, nichtflüchtiger Speicher, Feldeffekttransistoren, Logikanordnungen, Spannungsmessung ,Logic gates, Threshold voltage, Nonvolatile memory, Field effect transistors, Logic arrays, Voltage measurement ,Hardware_LOGICDESIGN - Abstract
Logic-in-memory circuits promise to overcome the von-Neumann bottleneck, which constitutes one of the limiting factors to data throughput and power consumption of electronic devices. In the following we present four-input logic gates based on only two ferroelectric FETs (FeFETs) with hafnium oxide as the ferroelectric material. By utilizing two complementary inputs, a XOR and a XNOR gate are created. The use of only two FeFETs results in a compact and nonvolatile design. This realization, moreover, directly couples the memory and logic function of the FeFET. The feasibility of the proposed structures is revealed by electrical measurements of HKMG FeFET memory arrays manufactured in 28nm technology.
- Published
- 2018