1. Detection of interfacial spin accumulation induced by anomalous Hall effect in ferromagnets
- Author
-
Runrun Hao, Guangbing Han, Guolei Liu, Shuyun Yu, Mengqi Xu, Shishou Kang, Tie Zhou, Lihui Bai, and Shishen Yan
- Subjects
010302 applied physics ,Materials science ,Spins ,Spin polarization ,Condensed matter physics ,02 engineering and technology ,Electron ,Conductivity ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Magnetic field ,Condensed Matter::Materials Science ,Ferromagnetism ,Hall effect ,0103 physical sciences ,Condensed Matter::Strongly Correlated Electrons ,0210 nano-technology ,Spin-½ - Abstract
We present an experimental observation of interfacial spin accumulation induced by anomalous Hall effect (AHE) in ferromagnets (FMs) in a multilayer structure of FM/YIG/Pt, where the direction of charge current injection in FM layer is perpendicular to the direction of voltage detection in Pt layer. In this structure, the magnon-mediated drag voltage (Vdrag) due to the interfacial spin accumulation induced by AHE, can be unambiguously separated from spin Seebeck voltage (VSSE) by sweeping or rotating the applied magnetic field. Field-dependent spin accumulation induced by AHE has been observed by comparison of nonlocal voltages between Ni/Cu/YIG/Pt and Pt/YIG/Pt samples. Furthermore, we demonstrate that the AHE voltage strongly depends on the spin polarization of conductivity and spin Hall angles of electrons with opposite spins in FMs. Our results show a prospect for FMs to be field-control spin generators via AHE, and provide a new viewpoint to realize the AHE.
- Published
- 2019