1. High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition.
- Author
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Li, Flora M., Bayer, Bernhard C., Hofmann, Stephan, Dutson, James D., Wakeham, Steve J., Thwaites, Mike J., Milne, William I., and Flewitt, Andrew J.
- Subjects
HAFNIUM oxide ,HAFNIUM compounds ,ELECTRICAL resistivity ,TEMPERATURE ,TITANIUM group - Abstract
Amorphous hafnium oxide (HfO
x ) is deposited by sputtering while achieving a very high k∼30. Structural characterization suggests that the high k is a consequence of a previously unreported cubiclike short range order in the amorphous HfOx (cubic k∼30). The films also possess a high electrical resistivity of 1014 Ω cm, a breakdown strength of 3 MV cm-1 , and an optical gap of 6.0 eV. Deposition at room temperature and a high deposition rate (∼25 nm min-1 ) makes these high-k amorphous HfOx films highly advantageous for plastic electronics and high throughput manufacturing. [ABSTRACT FROM AUTHOR]- Published
- 2011
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