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Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs), solar blind photodiodes and neutron detectors. We report the study of Mg in h-BN layers as well as Mg h-BN/AlGaN heterostructures. Mg incorporation in h-BN was studied under different biscyclopentadienyl-magnesium (Cp2Mg) molar flow rates. 2θ-ω x-ray diffraction scans clearly evidence a single peak, corresponding to the (002) reflection plane of h-BN with a full-width half maximum increasing with Mg incorporation in h-BN. For a large range of Cp2Mg molar flow rates, the surface of Mg doped h-BN layers exhibited characteristic pleats, confirming that Mg doped h-BN remains layered. Secondary ion mass spectrometry analysis showed Mg incorporation, up to 4 × 1018 /cm3 in h-BN. Electrical conductivity of Mg h-BN increased with increased Mg-doping. Heterostructures of Mg h-BN grown on n-type Al rich AlGaN (58% Al content) were made with the intent of forming a p-n heterojunction. The I-V characteristics revealed rectifying behavior for temperatures from 123 to 423 K. Under ultraviolet illumination, photocurrent was generated, as is typical for p-n diodes. C-V measurements evidence a built-in potential of 3.89 V. These encouraging results can indicate p-type behavior, opening a pathway for a new class of wide bandgap p-type layers. [ABSTRACT FROM AUTHOR]

The mechanical release of III‐nitride devices using h‐BN is a promising approach for heterogeneous integration. Upscaling this technology for industrial level requires solutions that allow a simple pick‐and‐place technique of selected devices for integration while preserving device performance. An advance that satisfies both of these requirements is demonstrated in this work. It is based on a lateral control of the h‐BN quality, using patterned sapphire with a SiO2 mask, to achieve localized van der Waals epitaxy of high‐quality GaN based device structures. After process fabrication, the devices can be individually picked and placed on a foreign substrate without the need for a dicing step. In addition, this approach could reduce delamination of h‐BN on large diameter substrates because each h‐BN region is smaller, with independent device structures. Discrete InGaN LEDs on h‐BN are grown and fabricated on 2 in. patterned sapphire using a SiO2 mask. A set of devices are selectively released and transferred to flexible aluminum tape. The transferred LEDs exhibit blue light emission around 435 nm. The approach presented here is scalable on any wafer size, can be applied to other types of nitride‐based devices, and can be compatible with commercial pick‐and‐place handlers for mass production. [ABSTRACT FROM AUTHOR]

Highlights • h-BN were grown on sub-micron size dome patterned sapphire substrates. • Wrinkled morphology of layered h-BN was obtained on c -plane sapphire. • On the domes, h-BN were different demonstrating anisotropy. • TEM confirmed h-BN is layered and continuous with turbostratic islands on domes. • 320 nm peak intensity increase confirms the TEM observations. Abstract Layered h-BN were grown on sub-micron size dome patterned sapphire substrates (PSS) by metal organic vapor phase epitaxy (MOVPE) to study the effects of substrate orientations, strain and subsequent thermal stress evolution. Electron micrograph images on the surface of the c -plane sapphire in-between the dome structures show typical wrinkled morphology of layered h-BN, similar to the reference sample surface confirming the high quality h-BN growth. However, the h-BN morphology on the domes exhibited pattern like folding which were drastically different from the h-BN on the c -plane sapphire. Detailed TEM studies show that the h -BN is layered and covers the dome patterns of the sapphire substrates like a "blanket of snow" continuously with localized strain variations induced turbostratic phase insertions. In addition, the local variation in optical emission properties of layered materials, which are dramatically affected by the rippled morphology were also investigated using depth resolved cathodoluminescence. The intensity variation of the 320 nm peak confirms that the BN on dome structures have more strain related defects than the c -plane h-BN. Thus, these results give better insight on the origin of turbostratic BN grains and local control over the structural and optical emission characteristics. [ABSTRACT FROM AUTHOR]