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Single‐crystal gallium nitride (GaN) thin films were grown using a graphene mask via multiple epitaxial lateral overgrowth (multiple‐ELOG). During the growth process, the graphene mask self‐decomposed to enable the emergence of a GaN film with a thickness of several hundred nanometres. This is in contrast to selective area growth of GaN using an SiO2 mask leading to the well known hexagonal‐pyramid shape under the same growth conditions. The multiple‐ELOG GaN had a single‐crystalline wurtzite structure corresponding to the crystallinity of the GaN template, which was confirmed with electron backscatter diffraction measurements. An X‐ray diffraction rocking curve of the asymmetric 102 reflection showed that the FWHM for the multiple‐ELOG GaN decreased to 405 from 540′′ for the underlying GaN template. From these results, the self‐decomposition of the graphene mask during ELOG was experimentally proven to be affected by the GaN decomposition rather than the high‐temperature/H2 growth conditions. [ABSTRACT FROM AUTHOR]