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A graphene oxide film fabricated by removing water from a graphene oxide dispersion is a characteristic dielectric. The graphene oxide layers in such a film are interconnected through van der Waals interactions of oxygen-containing functionalities and cluster interlayer water. It has been shown that, after treatment of the film with supercritical fluids based on water and isopropyl alcohol, its robust structure is not destroyed, but the surface is "graphenized" and it acquires new properties. The resulting materials were studied by physicochemical methods of analysis (C, H, N analysis, XRD, IR and Raman spectroscopy). An electrophysical study of the film treated with supercritical isopropanol has demonstrated that the temperature dependence corresponds to a narrow-gap semiconductor, and the resistivity determined by the four-probe method at room temperature was ~3 Ω m/mm2. [ABSTRACT FROM AUTHOR]

Interactions of graphene oxide with Ag, Cu, Fe, Fe, and Bi ions were studied. The minimum (threshold) ion concentrations required for the interaction with graphene oxide to occur were deter-mined in a series of experiments. A possible model of the interaction between the metal ions and the oxygen-containing groups of graphene oxide was proposed. [ABSTRACT FROM AUTHOR]