1. An eco-friendly bandgap engineering of semiconductor graphene oxide.
- Author
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Cruz Salazar, Y., Bellucci, S., Guevara, M., Vacacela Gomez, C., Caicedo, I., Buñay, J., López, S., Mayorga, D., Scarcello, A., Arias Polanco, M., Straface, S., Tene, T., and Caputi, L.S.
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GRAPHENE oxide , *SEMICONDUCTOR materials , *INSULATING materials , *SEMICONDUCTORS , *SEMICONDUCTOR industry - Abstract
• This work introduces an eco-friendly method for producing graphene oxide using non-toxic chemicals. • The optical bandgap of graphene oxide can be adjusted from 3.8 eV to 1.8 eV. • Reduced Graphene oxide may have potential applications in the semiconductor industry. Here, we demonstrate the tunability of the optical bandgap of graphene oxide (GO) and reduced graphene oxide (rGO) using an eco-friendly oxidation-reduction process. Based on UV–vis spectra and Tauc analysis, we observed a decrease in bandgap from 4.09 eV to 1.92 eV, effectively transforming GO from an insulating material to a semiconductor material. The transformation of GO into rGO is further characterized by FTIR, Raman, and TEM measurements. Additionally, electrical measurements showed that GO has a resistance of about 106, indicating its insulating nature. However, the reduction process significantly reduced the resistance of rGO to around 104, restoring its conductivity. Our results provide evidence for the potential use of GO and rGO in the semiconductor industry with tunable properties. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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