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We present trilayer graphene nanoribbon carrier statistics in the degenerate and the nondegenerate limits. Within zero to 3kBT from the conduction or valence band edgers high concentrations of carriers sensitively depend on a normalized Fermi energy which is independent of temperature. The effect of different stacking orders of graphene multilayers on the electric field induced band gap is studied. The gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. The gap for the different types of stacking is much larger as compared to the case of Bernal stacking. A non-monotonic dependence of the true energy gap in trilayer graphene on the charge density is investigated along with the electronic low-energy band structure of ABC stacked multilayer graphene. The band structure of trilayer graphene systems in the presence of a perpendicular electric field is obtained using a tight-binding approach. [ABSTRACT FROM AUTHOR]

In this paper we discuss the energy band structure of bilayer graphene nanoribbons (BGNRs) near the Fermi level between zero and 3kBT away from the conduction and valence bands. BGNRs can be used as the channel in field effect transistors (FETs). A FET can be created using graphene bilayers with the gate voltage perpendicular to the layers. We focus on carrier statistics in the degenerate regime and the density of states, and consider them to be fundamental properties of BGNRs. The model presented indicates that the normalized Fermi energy in the degenerate regime strongly depends on carrier concentration and is independent of temperature. [ABSTRACT FROM AUTHOR]

This paper focuses on the electronic transport properties of bilayer Graphene nanoribbons (BGNRs). The electronic transport of two dimensional AB stacked BGNRs with widths less than 10 nm is investigated. Due to the small width, the BGNR can be assumed to operate as a one dimensional device. A mathematical model of carrier concentration in BGNRs in the nondegenerate regime is presented. The model shows that in this regime the carrier statistics of BGNRs can be expressed by an exponential function of the normalized Fermi energy η, which is particularly useful in the lower carrier concentration regions. [ABSTRACT FROM AUTHOR]

We study the high-field transport behavior of a graphene nanoribbon in the degenerate and nondegenerate regimes by incorporating a previous low field mobility calculation modified for a high electric field in both regimes. The drift velocity model presented predicts that the transport behaviour is different in each regime when subject to an electric field. Our theoretical results are comparable with experimental data. The Fermi velocity (for the degenerate regime) and thermal velocity (for the nondegenerate regime) coupled with optical phonon emission have a large influence on the drift velocity leading to a velocity saturation preceded by a monotonic increase with increasing electric field. [ABSTRACT FROM AUTHOR]