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14 results on '"Rafal Zuzak"'

1. On-surface synthesis and intermolecular cycloadditions of indacenoditetracenes, antiaromatic analogues of undecacene

Author

Rafal Zuzak, Antonio M. Echavarren, Rémi Blieck, Otilia Stoica, and Szymon Godlewski

Subjects
Nanostructure, Materials science, antiaromatics, General Physics and Astronomy, 010402 general chemistry, 01 natural sciences, Adduct, cycloadditions, Pentacene, chemistry.chemical_compound, cyclodehydrogenation, indacenoditetracene, General Materials Science, on-surface synthesis, Fusion, 010405 organic chemistry, Intermolecular force, General Engineering, Rational design, Cycloaddition, 0104 chemical sciences, 3. Good health, Crystallography, chemistry, Antiaromaticity
Abstract

The formation of s-indaceno[1,2-b:5,6-b']ditetracene and as-indaceno[2,3-b:6,7-b']ditetracene containing indenofluorene cores from a common precursor has been achieved by a dehydrogenative surface-assisted cyclization on Au(111) and confirmed by bond-resolved non-contact atomic force microscopy. On-surface generated as-indaceno[2,3-b:6,7-b']ditetracenes undergo fusion, which leads to T-shaped adducts by an intermolecular cycloaddition. The same type of cycloaddition, which has no parallel in solution chemistry, has been observed between as-indaceno[2,3-b:6,7-b']ditetracene and pentacene or octacene. These examples of surface-assisted cycloaddition provide perspectives for the rational design and synthesis of molecular nanostructures.

Published
2021

2. Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

Author

Rafal Zuzak, Szymon Godlewski, and Marek Szymonski

Subjects
Materials science, Scanning tunneling spectroscopy, General Physics and Astronomy, chemistry.chemical_element, Germanium, 02 engineering and technology, 010402 general chemistry, lcsh:Chemical technology, 01 natural sciences, lcsh:Technology, Full Research Paper, law.invention, chemistry.chemical_compound, Adsorption, law, Monolayer, Nanotechnology, Molecule, General Materials Science, lcsh:TP1-1185, iron phthalocyanine (FePc), Electrical and Electronic Engineering, lcsh:Science, iron phthalocyanine (fepc), lcsh:T, self-assembly, 021001 nanoscience & nanotechnology, lcsh:QC1-999, 0104 chemical sciences, Nanoscience, Crystallography, chemistry, hydrogenated semiconductor, Phthalocyanine, scanning tunneling microscopy, lcsh:Q, Self-assembly, Scanning tunneling microscope, 0210 nano-technology, lcsh:Physics
Abstract

Self-assembly of iron(II) phthalocyanine (FePc) molecules on a Ge(001):H surface results in monolayer islands extending over hundreds of nanometers and comprising upright-oriented entities. Scanning tunneling spectroscopy reveals a transport gap of 2.70 eV in agreement with other reports regarding isolated FePc molecules. Detailed analysis of single FePc molecules trapped at surface defects indicates that the molecules stay intact upon adsorption and can be manipulated away from surface defects onto a perfectly hydrogenated surface. This allows for their isolation from the germanium surface.

Published
2021

3. On-Surface Synthesis with Atomic Hydrogen

Author

Marek Szymonski, André Gourdon, Szymon Godlewski, Rafal Zuzak, Andrej Jančařík, Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)

Subjects
Surface (mathematics), Nanostructure, Materials science, Hydrogen, molecular polymers, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, graphene nanoribbon, Article, Adsorption, General Materials Science, on-surface synthesis, [CHIM.ORGA]Chemical Sciences/Organic chemistry, organometallic state, General Engineering, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Flue-gas desulfurization, chemistry, Chemical engineering, Polymerization, Reagent, Halogen, Additions and Corrections, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], hydrogenation, 0210 nano-technology, atomic hydrogen
Abstract

International audience; Surface-assisted synthesis has become a powerful approach for generation of molecular nanostructures, which could not be obtained via traditional solution chemistry. Nowadays there is an intensive search for reactions that could proceed on flat surfaces in order to boost the versatility and applicability of synthesized nano-objects. Here we propose application of atomic hydrogen combined with on-surface synthesis in order to tune the reaction pathways. We demonstrate that atomic hydrogen could be widely applied: (1) as a cleaning tool, which allows removal of halogen residues from the surface after Ullmann couplings/polymerization, (2) by reaction with surface organometallics to provide stable hydrogenated species, and (3) as a reagent for debromination or desulfurization of adsorbed species.

Published
2020
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4. Correction to On-Surface Synthesis with Atomic Hydrogen

Author

André Gourdon, Rafal Zuzak, Andrej Jančařík, Szymon Godlewski, and Marek Szymonski

Subjects
Surface (mathematics), Materials science, Hydrogen, chemistry, Published Erratum, General Engineering, General Physics and Astronomy, chemistry.chemical_element, Physical chemistry, General Materials Science
Published
2020
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5. Electronic transport in planar atomic-scale structures measured by two-probe scanning tunneling spectroscopy

Author

Hiroyo Kawai, Marek Szymonski, Rafal Zuzak, Daniel Sánchez-Portal, Thomas Frederiksen, Marek Kolmer, Szymon Godlewski, Nicolás Lorente, Aran Garcia-Lekue, Christian Joachim, Pedro Brandimarte, Jakub Lis, Centre for Nanometer-Scale Science and Advanced Materials (NANOAM), Uniwersytet Jagielloński w Krakowie = Jagiellonian University (UJ), Center for Nanophase Materials Sciences [Oak Ridge] (CNMS), Oak Ridge National Laboratory [Oak Ridge] (ORNL), UT-Battelle, LLC-UT-Battelle, LLC, Donostia International Physics Center (DIPC), University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU), Agency for science, technology and research [Singapore] (A*STAR), Donostia International Physics Center - DIPC (SPAIN), University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU)-University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU), Ikerbasque - Basque Foundation for Science, Sciences Economiques et Sociales de la Santé & Traitement de l'Information Médicale (SESSTIM - U1252 INSERM - Aix Marseille Univ - UMR 259 IRD), Institut de Recherche pour le Développement (IRD)-Aix Marseille Université (AMU)-Institut National de la Santé et de la Recherche Médicale (INSERM), Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Center of Materials Physics CSIC-UPV / EHU and Donostia International Physics Center, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), European Commission, Ministry of Science and Higher Education (Poland), Ministerio de Economía y Competitividad (España), Brandimarte, Pedro, Zuzak, Rafał, Godlewski, Szymon, Frederiksen, Thomas, Institut National des Sciences Appliquées (INSA)-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées (INSA)-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), DUJARDIN, Erik, Brandimarte, Pedro [000-0002-8762-5876], Zuzak, Rafał [0000-0001-6617-591X], Godlewski, Szymon [0000-0002-8515-1566], and Frederiksen, Thomas [0000-0001-7523-7641]

Subjects
0301 basic medicine, Materials science, Science, Transconductance, Scanning tunneling spectroscopy, General Physics and Astronomy, 02 engineering and technology, Electron, Atomic units, Molecular physics, General Biochemistry, Genetics and Molecular Biology, Article, [PHYS] Physics [physics], 03 medical and health sciences, Scanning probe microscopy, Miniaturization, Physics::Atomic and Molecular Clusters, lcsh:Science, Surface states, Condensed Matter::Quantum Gases, [PHYS]Physics [physics], Multidisciplinary, General Chemistry, 021001 nanoscience & nanotechnology, Characterization (materials science), 030104 developmental biology, lcsh:Q, 0210 nano-technology
Abstract

Miniaturization of electronic circuits into the single-atom level requires novel approaches to characterize transport properties. Due to its unrivaled precision, scanning probe microscopy is regarded as the method of choice for local characterization of atoms and single molecules supported on surfaces. Here we investigate electronic transport along the anisotropic germanium (001) surface with the use of two-probe scanning tunneling spectroscopy and first-principles transport calculations. We introduce a method for the determination of the transconductance in our two-probe experimental setup and demonstrate how it captures energy-resolved information about electronic transport through the unoccupied surface states. The sequential opening of two transport channels within the quasi-one-dimensional Ge dimer rows in the surface gives rise to two distinct resonances in the transconductance spectroscopic signal, consistent with phase-coherence lengths of up to 50 nm and anisotropic electron propagation. Our work paves the way for the electronic transport characterization of quantum circuits engineered on surfaces., This work was supported by the FP7 FET-ICT “Planar Atomic and Molecular Scale devices” (PAMS) project (funded by the European Commission under contract number 610446), the Polish Ministry for Science and Higher Education from financial resources for science in 2013–2017 granted for an international co-financed project (contract number 2913/7.PR/2013/2) and the Spanish Ministerio de Economía y Competitividad (MINECO) (Grant Numbers MAT2016-78293-C6-4-R and FIS2017-83780-P). M.K. acknowledges financial support received from the Polish Ministry of Science and Higher Education, contract number 0341/IP3/2016/74.

Published
2019
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6. Site-selective reversible Diels–Alder reaction between a biphenylene-based polyarene and a semiconductor surface

Author

Marek Kolmer, Diego Peña, Dolores Pérez, Marek Szymonski, Rafal Zuzak, Daniel Sánchez-Portal, Enrique Guitián, K. Peter C. Vollhardt, Szymon Godlewski, Jorge Caeiro, Hiroyo Kawai, Mads Engelund, Universidade de Santiago de Compostela. Centro de Investigación en Química Biolóxica e Materiais Moleculares, Universidade de Santiago de Compostela. Departamento de Química Orgánica, European Commission, Ministry of Science and Higher Education (Poland), Ministerio de Economía y Competitividad (España), and Xunta de Galicia

Subjects
Materials science, Dimer, General Physics and Astronomy, Triphenylene, 02 engineering and technology, Biphenylene, 010402 general chemistry, 021001 nanoscience & nanotechnology, Photochemistry, 01 natural sciences, Cycloaddition, 0104 chemical sciences, chemistry.chemical_compound, chemistry, Covalent bond, Molecule, Physical and Theoretical Chemistry, 0210 nano-technology, Antiaromaticity, Diels–Alder reaction
Abstract

Understanding the mechanisms involved in the covalent attachment of organic molecules to surfaces is a major challenge for nanotechnology and surface science. On the basis of classical organic chemistry mechanistic considerations, key issues such as selectivity and reactivity of the organic adsorbates could be rationalized and exploited for the design of molecular-scale circuits and devices. Here we use tris(benzocyclobutadieno)triphenylene, a singular Y-shaped hydrocarbon containing antiaromatic cyclobutadienoid rings, as a molecular probe to study the reaction of polycyclic conjugated molecules with atomic scale moieties, dangling-bond (DB) dimers on a hydrogen-passivated Ge(001):H surface. By combining molecular design, synthesis, scanning tunneling microscopy and spectroscopy (STM/STS) and computational modeling, we show that the attachment involves a concerted [4+2] cycloaddition reaction that is completely site-selective and fully reversible. This selectivity, governed by the bond alternation induced by the presence of the cyclobutadienoid rings, allows for the control of the orientation of the molecules with respect to the surface DB-patterning. We also demonstrate that by judicious modification of the electronic levels of the polycyclic benzenoid through substituents, the reaction barrier height can be modified. Finally, we show that after deliberate tip-induced covalent bond cleavage, adsorbed molecules can be used to fine tune the electronic states of the DB dimer. This power to engineer deliberately the bonding configuration and electronic properties opens new perspectives for creating prototypical nanoscale circuitry., This work was supported by the FP7 FET-ICT “Planar Atomic and Molecular Scale devices” (PAMS) project (funded by the European Commission under contract no. 610446), by the Polish Ministry for Science and Higher Education from financial resources for science in 2013–2017 granted for an international co-financed project (contract no. 2913/7.PR/2013/2) and by projects CTQ2016-78157-R, MAT2016-78293-C6-3R and MAT2016-78293-C6-4R (AEI/FEDER, UE). EG, DP and DP are grateful for financial support from the Xunta de Galicia (Centro singular de investigación de Galicia accreditation 2016–2019, ED431G/09) and the European Union (European Regional Development Fund-ERDF).

Published
2018

7. The butterfly – a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations

Author

Thomas Frederiksen, Szymon Godlewski, Rafal Zuzak, Mads Engelund, Bartosz Such, Marek Szymonski, Marek Kolmer, Daniel Sánchez-Portal, European Commission, Ministerio de Economía y Competitividad (España), Eusko Jaurlaritza, Universidad del País Vasco, Foundation for Polish Science, and CSIC - Unidad de Recursos de Información Científica para la Investigación (URICI)

Subjects
Current (mathematics), Materials science, Bistability, Dangling bond, General Physics and Astronomy, 02 engineering and technology, Rate equation, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Characterization (materials science), law.invention, Electronic states, Crystallography, law, 0103 physical sciences, Constant current, Physical and Theoretical Chemistry, Scanning tunneling microscope, 010306 general physics, 0210 nano-technology
Abstract

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence., Dangling bond (DB) arrays on Si(001):H and Ge(001):H surfaces can be patterned with atomic precision and they exhibit complex and rich physics making them interesting from both technological and fundamental perspectives. But their complex behavior often makes scanning tunneling microscopy (STM) images difficult to interpret and simulate. Recently it was shown that low-temperature imaging of unoccupied states of an unpassivated dimer on Ge(001):H results in a symmetric butterfly-like STM pattern, despite that the equilibrium dimer configuration is expected to be a bistable, buckled geometry. Here, based on a thorough characterization of the low-bias switching events, we propose a new imaging model featuring a dynamical two-state rate equation. This model allows us to reproduce the features of the observed symmetric empty-state images which strongly corroborates the idea that the patterns arise due to fast switching events and provides insight into the relation between the tunneling current and switching rates. Our new imaging model is general and can be applied to other systems that exhibit rapid fluctuations during STM experiments., The work is funded by the European Commission under the FP7 FET-ICT “Planar Atomic and Molecular Scale devices” (PAMS) project (Contract No. 610446) and National Science Centre, Poland (2014/15/D/ST3/02975). ME, TF, and DSP also acknowledge support from the Spanish Ministerio de Economía y Competitividad (MINECO) (Grant No. MAT2013-46593-C6-2-P) and the Basque Dep. de Educación and the UPV/EHU (Grant No. IT-756-13). MK acknowledges financial support received from the Foundation for Polish Science (FNP). RZ acknowledges support received from KNOW (scholarship KNOW/44/SS/RZ/2015)., We acknowledge support by the CSIC Open Access Publication Initiative through its Unit of Information Resources for Research (URICI).

Published
2016
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8. Nonacene generated by on-surface dehydrogenation

Author

Marek Szymonski, Bartosz Such, Rafal Zuzak, Mariusz Krawiec, Antonio M. Echavarren, Ruth Dorel, Szymon Godlewski, and Marek Kolmer

Subjects
Heptacene, 010405 organic chemistry, Chemistry, Scanning tunneling spectroscopy, General Engineering, General Physics and Astronomy, 010402 general chemistry, Photochemistry, 01 natural sciences, 0104 chemical sciences, law.invention, chemistry.chemical_compound, Crystallography, law, Molecule, General Materials Science, Molecular orbital, Dehydrogenation, Density functional theory, Physics::Chemical Physics, Scanning tunneling microscope, Isomerization
Abstract

The on-surface synthesis of nonacene has been accomplished by dehydrogenation of an air-stable partially saturated precursor, which could be aromatized by using a combined scanning tunnelling and atomic force microscope (STM/AFM) tip as well as by on-surface annealing. This transformation allowed the in-detail analysis of the electronic properties of nonacene molecules physisorbed on Au(111) by scanning tunnelling spectroscopy (STS) measurements, which were corroborated by density theory functional (DFT) calculations thus confirming the spatial mapping of its molecular orbitals. Furthermore, the thermally-induced dehydrogenation uncovered the isomerisation of intermediate dihydrononacene species, which allowed for their in-depth structural and electronic characterization.

Published
2017

9. Contacting a Conjugated Molecule with a Surface Dangling Bond Dimer on a Hydrogenated Ge(001) Surface Allows Imaging of the Hidden Ground Electronic State

Author

Marek Kolmer, Bartosz Such, Hiroyo Kawai, Paula de Mendoza, Rafal Zuzak, Antonio M. Echavarren, Mark Saeys, Christian Joachim, Szymon Godlewski, Marek Szymonski, Uniwersytet Jagielloński w Krakowie = Jagiellonian University (UJ), Agency for science, technology and research [Singapore] (A*STAR), Institute of Chemical Research of Catalonia (ICIQ), Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Surface (mathematics), Fabrication, Materials science, single-molecule devices, atomic-scale contacts, surface dangling bonds, Dimer, General Physics and Astronomy, Nanotechnology, 02 engineering and technology, Conjugated system, 01 natural sciences, law.invention, Condensed Matter::Materials Science, chemistry.chemical_compound, scanning tunneling microscope, Hardware_GENERAL, law, 0103 physical sciences, [CHIM]Chemical Sciences, General Materials Science, Physics::Chemical Physics, 010306 general physics, Coupling, molecule manipulation, organic molecule, General Engineering, Dangling bond, 021001 nanoscience & nanotechnology, chemistry, hydrogenated semiconductor, Chemical physics, Scanning tunneling microscope, 0210 nano-technology
Abstract

cited By 18; International audience; Fabrication of single-molecule logic devices requires controlled manipulation of molecular states with atomic-scale precision. Tuning molecule–substrate coupling is achieved here by the reversible attachment of a prototypical planar conjugated organic molecule to dangling bonds on the surface of a hydrogenated semiconductor. We show that the ground electronic state resonance of a Y-shaped polyaromatic molecule physisorbed on a defect-free area of a fully hydrogenated surface cannot be observed by scanning tunneling microscopy (STM) measurements because it is decoupled from the Ge bulk states by the hydrogen-passivated surface. The state can be accessed by STM only if the molecule is contacted with the substrate by a dangling bond dimer. The reversibility of the attachment processes will be advantageous in the construction of surface atomic-scale circuits composed of single-molecule devices interconnected by the surface dangling bond wires.

Published
2013
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10. Interaction of a conjugated polyaromatic molecule with a single dangling bond quantum dot on a hydrogenated semiconductor

Author

Rafal Zuzak, Hiroyo Kawai, Antonio M. Echavarren, Mark Saeys, Marek Kolmer, Mads Engelund, Daniel Sánchez-Portal, Szymon Godlewski, Aran Garcia-Lekue, Marek Szymonski, Christian Joachim, Centre for Nanometer-Scale Science and Advanced Materials (NANOAM), Uniwersytet Jagielloński w Krakowie = Jagiellonian University (UJ), Departamento de Fisica de Materieles and Centro Mixto CSIC-UPV/EHU, Facultad de Ciencias Quimicas, Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore., Donostia International Physics Center - DIPC (SPAIN), Donostia International Physics Center (DIPC), University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU)-University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU), Universiteit Gent = Ghent University [Belgium] (UGENT), Institute of Chemical Research of Catalonia (ICIQ), Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Ministry of Science and Higher Education (Poland), European Commission, Ministerio de Economía y Competitividad (España), Eusko Jaurlaritza, Universidad del País Vasco, Foundation for Polish Science, Agency for Science, Technology and Research A*STAR (Singapore), National Science Centre (Poland), Universiteit Gent = Ghent University (UGENT), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
General Physics and Astronomy, 02 engineering and technology, Substrate (electronics), Electronic structure, 01 natural sciences, law.invention, Condensed Matter::Materials Science, law, Computational chemistry, 0103 physical sciences, Molecule, Physical and Theoretical Chemistry, Physics::Chemical Physics, 010306 general physics, HOMO/LUMO, [PHYS]Physics [physics], Quantitative Biology::Biomolecules, business.industry, Chemistry, Dangling bond, 021001 nanoscience & nanotechnology, Semiconductor, Chemical physics, Quantum dot, Scanning tunneling microscope, 0210 nano-technology, business
Abstract

Controlling the strength of the coupling between organic molecules and single atoms provides a powerful tool for tuning electronic properties of single-molecule devices. Here, using scanning tunneling microscopy and spectroscopy (STM/STS) supported by theoretical modeling, we study the interaction of a planar organic molecule (trinaphthylene) with a hydrogen-passivated Ge(001):H substrate and a single dangling bond quantum dot on that surface. The electronic structure of the molecule adsorbed on the hydrogen-passivated surface is similar to the gas phase structure and the measurements show that HOMO and LUMO states contribute to the STM filled and empty state images, respectively. Furthermore, we show that the electronic properties are not significantly affected when the molecule is attached to the single dangling bond, which is in contrast with the strong interaction of the molecule with a dangling bond dimer. Our results show that the dangling bond quantum dots could stabilize organic molecules on a hydrogenated semiconductor without affecting their originally designed gas phase electronic properties. Together with the ability to laterally manipulate the molecules on the surface, this will be advantageous in the construction of single-molecule devices, where the coupling and positioning of the molecules on the substrate could be tuned by a proper design of the surface quantum dot arrays, comprising both single and dimerized dangling bonds., This work was supported by the Polish Ministry for Science and Higher Education, contract no. 0322/IP3/2013/72. The experiment was carried out using equipment purchased with financial support from the European Regional Development Fund within the framework of the Polish Innovation Economy Operational Program (contract no. POIG.02.01.00-12-023/08). ME, AGL and DSP acknowledge funding by the FP7 FET-ICT “Planar Atomic and Molecular Scale devices” (PAMS) project (funded by the European Commission under contract No. 610446), the Spanish Ministerio de Economia y Competitividad (MINECO) (Grant No. MAT2013-46593-C6-2-P) and the Basque Department of Education and the UPV/EHU (Grant No. IT-756-13). MK acknowledges financial support received from the Foundation for Polish Science (FNP). SG acknowledges the support from the National Science Centre, Poland (2014/15/D/ST3/02975). AME acknowledges the MINECO (Grant No. CTQ2013-42106-P). HK acknowledges the A*STAR Computational Resource Centre (A*CRC) for the computational resources and support. RZ acknowledges support received from KNOW (scholarship KNOW/44/SS/RZ/2015).

Published
2016
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11. Single-molecule rotational switch on a dangling bond dimer bearing

Author

Rafal Zuzak, Antonio M. Echavarren, Marek Szymonski, Szymon Godlewski, Mark Saeys, Hiroyo Kawai, Christian Joachim, Marek Kolmer, Centre for Nanometer-Scale Science and Advanced Materials (NANOAM), Uniwersytet Jagielloński w Krakowie = Jagiellonian University (UJ), Institute of Materials Research and Engineering, Singapore, Institute of Materials Research and Engineering, Institute of Chemical Research of Catalonia (ICIQ), Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratory for Chemical Technology, Universiteit Gent = Ghent University [Belgium] (UGENT), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), and Universiteit Gent = Ghent University (UGENT)

Subjects
single-molecule devices, surface dangling bonds, Dimer, General Physics and Astronomy, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Molecular physics, law.invention, symbols.namesake, chemistry.chemical_compound, Condensed Matter::Materials Science, single-molecule manipulation, molecular rotor, law, scanning tunneling microscope, Molecule, hydrogenated semiconductor surface, General Materials Science, Molecular switch, [PHYS]Physics [physics], Chemistry, organic molecule, General Engineering, Dangling bond, 021001 nanoscience & nanotechnology, 0104 chemical sciences, molecular switch, Bond length, Covalent bond, symbols, Scanning tunneling microscope, van der Waals force, Atomic physics, 0210 nano-technology
Abstract

cited By 6; International audience; One of the key challenges in the construction of atomic-scale circuits and molecular machines is to design molecular rotors and switches by controlling the linear or rotational movement of a molecule while preserving its intrinsic electronic properties. Here, we demonstrate both the continuous rotational switching and the controlled step-by-step single switching of a trinaphthylene molecule adsorbed on a dangling bond dimer created on a hydrogen-passivated Ge(001):H surface. The molecular switch is on-surface assembled when the covalent bonds between the molecule and the dangling bond dimer are controllably broken, and the molecule is attached to the dimer by long-range van der Waals interactions. In this configuration, the molecule retains its intrinsic electronic properties, as confirmed by combined scanning tunneling microscopy/spectroscopy (STM/STS) measurements, density functional theory calculations, and advanced STM image calculations. Continuous switching of the molecule is initiated by vibronic excitations when the electrons are tunneling through the lowest unoccupied molecular orbital state of the molecule. The switching path is a combination of a sliding and rotation motion over the dangling bond dimer pivot. By carefully selecting the STM conditions, control over discrete single switching events is also achieved. Combined with the ability to create dangling bond dimers with atomic precision, the controlled rotational molecular switch is expected to be a crucial building block for more complex surface atomic-scale devices.

Published
2016
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12. Diels–Alder attachment of a planar organic molecule to a dangling bond dimer on a hydrogenated semiconductor surface

Author

Mark Saeys, Christian Joachim, Daniel Sánchez-Portal, Mads Engelund, Szymon Godlewski, Hiroyo Kawai, Rafal Zuzak, Antonio M. Echavarren, Marek Kolmer, Gerard Novell-Leruth, Aran Garcia-Lekue, National Science Centre (Poland), European Commission, Ministerio de Economía y Competitividad (España), Eusko Jaurlaritza, Universidad del País Vasco, Foundation for Polish Science, Ministry of Science and Higher Education (Poland), Centre for Nanometer-Scale Science and Advanced Materials (NANOAM), Uniwersytet Jagielloński w Krakowie = Jagiellonian University (UJ), Institute of Materials Research and Engineering, Singapore, Institute of Materials Research and Engineering, CSIC-UPV/EHU, Donostia International Physics Center - DIPC (SPAIN), Donostia International Physics Center (DIPC), University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU)-University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU), Universiteit Gent = Ghent University [Belgium] (UGENT), Institute of Chemical Research of Catalonia (ICIQ), Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), University of the Basque Country/Euskal Herriko Unibertsitatea (UPV/EHU), Universiteit Gent = Ghent University (UGENT), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Dimer, Dangling bond, General Physics and Astronomy, 02 engineering and technology, Conjugated system, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, law.invention, Crystallography, chemistry.chemical_compound, chemistry, Chemical bond, Computational chemistry, law, Covalent bond, Molecule, Reactivity (chemistry), Physical and Theoretical Chemistry, Scanning tunneling microscope, 0210 nano-technology
Abstract

Construction of single-molecule electronic devices requires the controlled manipulation of organic molecules and their properties. This could be achieved by tuning the interaction between the molecule and individual atoms by local “on-surface” chemistry, i.e., the controlled formation of chemical bonds between the species. We demonstrate here the reversible attachment of a planar conjugated polyaromatic molecule to a pair of unpassivated dangling bonds on a hydrogenated Ge(001):H surface via a Diels–Alder [4+2] addition using the tip of a scanning tunneling microscope (STM). Due to the small stability difference between the covalently bonded and a nearly undistorted structure attached to the dangling bond dimer by long-range dispersive forces, we show that at cryogenic temperatures the molecule can be switched between both configurations. The reversibility of this covalent bond forming reaction may be applied in the construction of complex circuits containing organic molecules with tunable properties., This work was supported by the National Science Centre, Poland (2014/15/D/ST3/02975). The experiment was carried out using equipment purchased with financial support from the European Regional Development Fund within the framework of the Polish Innovation Economy Operational Program (contract no. POIG.02.01.00-12-023/08). ME, AGL and DSP acknowledge funding by the FP7 FET-ICT “Planar Atomic and Molecular Scale devices” (PAMS) project (funded by the European Commission under contract no. 610446), the Spanish Ministerio de Economia y Competitividad (MINECO) (Grant No. MAT2013-46593-C6-2-P) and the Basque Department of Education and the UPV/EHU (Grant No. IT-756-13). MK acknowledges financial support received from the Foundation for Polish Science (FNP). SG acknowledges the support from the Polish Ministry for Science and Higher Education, contract no. 0322/IP3/2013/72. AME acknowledges the MINECO (Grant No. CTQ2013-42106-P). HK acknowledges the A*STAR Computational Resource Centre (A*CRC) for the computational resources and support. CJ acknowledges the MANA NEXT financial support during this work. RZ acknowledges support received from KNOW (scholarship KNOW/44/SS/RZ/2015).

Published
2016
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13. Fermi level pinning at the Ge(001) surface - A case for non-standard explanation

Author

Marek Szymonski, Mateusz Wojtaszek, Jakub Lis, Rafal Zuzak, Bartosz Such, Szymon Godlewski, and Marek Kolmer

Subjects
Materials science, Band gap, General Physics and Astronomy, chemistry.chemical_element, FOS: Physical sciences, Germanium, doping, surface structure, law.invention, symbols.namesake, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), surface states, Surface states, Condensed Matter - Materials Science, Valence (chemistry), Condensed matter physics, Dopant, Condensed Matter - Mesoscale and Nanoscale Physics, valence bands, Fermi level, fermi levels, Materials Science (cond-mat.mtrl-sci), Band bending, chemistry, symbols, Scanning tunneling microscope
Abstract

To explore the origin of the Fermi level pinning in germanium we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed. For samples with donors as majority dopants the surface Fermi level appears close to the top of the valence band regardless of the surface structure. Surprisingly, for the passivated surface it is located below the top of the valence band allowing scanning tunneling microscopy imaging within the band gap. We argue that the well known electronic mechanism behind band bending does not apply and a more complicated scenario involving ionic degrees of freedom is therefore necessary. Experimental techniques involve four point probe electric current measurements, scanning tunneling microscopy and spectroscopy., Comment: 5 pages, 4 figures

Published
2015
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14. Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(0 0 1) wafers processed and nanopackaged in a clean room environment

Author

Rafal Zuzak, Aurélie Thuaire, Mateusz Wojtaszek, Hubert Moriceau, Marek Kolmer, Christian Joachim, Marek Szymonski, Caroline Rauer, Szymon Godlewski, Jean-Michel Hartmann, Centre for Nanometer-Scale Science and Advanced Materials (NANOAM), Uniwersytet Jagielloński w Krakowie = Jagiellonian University (UJ), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Interuniversitaire des Systèmes Atmosphériques (LISA (UMR_7583)), Institut national des sciences de l'Univers (INSU - CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS), Groupe NanoSciences (CEMES-GNS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), European Project: 270028,EC:FP7:ICT,FP7-ICT-2009-6,ATMOL(2011), Jagiellonian University [Krakow] (UJ), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Institut national des sciences de l'Univers (INSU - CNRS)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées (INSA)-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)

Subjects
Fabrication, Materials science, Nanostructure, Hydrogen, nanopackaging, General Physics and Astronomy, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, hydrogen passivated Si (0 0 1) surface, 01 natural sciences, Atomic units, law.invention, law, dangling bond nanostructures, 0103 physical sciences, Wafer, 010306 general physics, [PHYS]Physics [physics], Doping, Dangling bond, low-temperature scanning tunneling microscopy and spectroscopy (LT STM/STS), Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, STM-tip-induced desorption, Surfaces, Coatings and Films, chemistry, Scanning tunneling microscope, 0210 nano-technology
Abstract

cited By 21; International audience; Specific surfaces allowing the ultra-high vacuum (UHV) creation of electronic interconnects and atomic nanostructures are required for the successful development of novel nanoscale electronic devices. Atomically flat and reconstructed Si(0 0 1):H surfaces are serious candidates for that role. In this work such Si:H surfaces were prepared in a cleanroom environment on 200 mm silicon wafers with a hydrogen bake and were subsequently bonded together to ensure the surface protection, and allow their transportation and storage for several months in air. Given the nature of the bonding, which was hydrophobic with weak van der Waals forces, we were then able to de-bond them in UHV. We show that the quality of the de-bonded Si:H surface enables the “at will” construction of sophisticated and complex dangling bond (DB) nanostructures by atomically precise scanning tunneling microscope (STM) tip induced desorption of hydrogen atoms. The DB structures created on slightly doped Si:H samples were characterized by scanning tunneling microscopy and spectroscopy (STM/STS) performed at 4 K. Our results demonstrate that DB nanostructures fabricated on UHV de-bonded Si(0 0 1):H wafers could be directly incorporated in future electronics as interconnects and parts of nanoscale logic circuits.

Published
2014
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